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1N6060AE3

Description
Trans Voltage Suppressor Diode, 1500W, 64V V(RWM), Bidirectional, 1 Element, Silicon, DO-202AA, HERMETIC SEALED, METAL GLASS, DO-13, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size205KB,6 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Environmental Compliance
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1N6060AE3 Overview

Trans Voltage Suppressor Diode, 1500W, 64V V(RWM), Bidirectional, 1 Element, Silicon, DO-202AA, HERMETIC SEALED, METAL GLASS, DO-13, 2 PIN

1N6060AE3 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionO-MALF-W2
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
Maximum breakdown voltage78.8 V
Minimum breakdown voltage71.3 V
Breakdown voltage nominal value75 V
Shell connectionISOLATED
Maximum clamping voltage103 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 codeDO-202AA
JESD-30 codeO-MALF-W2
Maximum non-repetitive peak reverse power dissipation1500 W
Number of components1
Number of terminals2
Package body materialMETAL
Package shapeROUND
Package formLONG FORM
polarityBIDIRECTIONAL
Maximum power dissipation1 W
Maximum repetitive peak reverse voltage64 V
surface mountNO
technologyAVALANCHE
Terminal formWIRE
Terminal locationAXIAL
Base Number Matches1
1N6036(A)* thru 1N6072(A)*
1500 WATT BIDIRECTIONAL
TRANSIENT VOLTAGE SUPPESSOR
Qualified per MIL-PRF-19500/507
DESCRIPTION
This popular Transient Voltage Suppressor (TVS) series for 1N6036 thru 1N6072A are JEDEC
registered selections for bidirectional devices. All have the same high Peak Pulse Power
rating of 1500 W with extremely fast response times. They are also available in military
qualified selections as described in the “Features” section herein. They are most often used
for protecting against transients from inductive switching environments, induced RF effects, or
induced secondary lightning effects as found in lower surge levels of IEC61000-4-5. They are
also very successful in protecting airborne avionics and electrical systems. Since their
response time is virtually instantaneous, they can also protect from ESD and EFT per
IEC61000-4-2 and IEC61000-4-4.
Important:
For the latest information, visit our website
http://www.microsemi.com.
Available on
commercial
versions
Qualified Levels:
JAN, JANTX, and
JANTXV
FEATURES
Bidirectional TVS series in axial packages for thru-hole mounting.
Suppresses transients up to 1500 watts @ 10/1000 µs (see
Figure 1).
Clamps transients in less than 100 pico seconds.
Working voltage (V
WM
) range 5.5 V to 185 V.
Hermetically sealed DO-13 metal package.
*JAN, JANTX, JANTXV military qualifications also available per MIL-PRF-19500/507 for the tighter
tolerance “A” suffix types by adding the JAN, JANTX, or JANTXV prefix, e.g. JANTXV1N6036A,
etc.
RoHS compliant versions available (commercial grade only).
DO-13 (DO-202AA)
Package
Also available in:
DO-13 package
(unidirectional)
1N5629 – 1N5665A
Case 1 package
(plastic equivalent)
1.5KE6.8C – 1.5KE220CA
APPLICATIONS / BENEFITS
Protection from switching transients and induced RF.
Protection from ESD & EFT per IEC 61000-4-2 and IEC 61000-4-4.
Secondary lightning protection per IEC61000-4-5 with 42 Ohms source impedance:
Class 1: 1N6036 to 1N6072A
Class 2: 1N6036 to 1N6067A
Class 3: 1N6036 to 1N6061A
Class 4: 1N6036 to 1N6054A
Secondary lightning protection per IEC61000-4-5 with 12 Ohms source impedance:
Class 1: 1N6036 to 1N6064A
Class 2: 1N6036 to 1N6057A
Class 3: 1N6036 to 1N6049A
Class 4: 1N6036 to 1N6042A
Secondary lightning protection per IEC61000-4-5 with 2 Ohms source impedance:
Class 2: 1N6036 to 1N6048A
Class 3: 1N6036 to 1N6041A
Inherently radiation hard as described in Microsemi “MicroNote
050”.
DO-215AB package
(Gull-wing)
SMCG5.0 – SMCG170A
DO-214AB package
(J-bend)
SMCJ5.0 – SMCJ170A
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
T4-LDS-0097, Rev. 3 (120714)
©2012 Microsemi Corporation
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