BAT15...
Silicon Schottky Diodes
•
Low barrier type for DBS mixer applications
up to 12 GHz, phase detectors and modulators
•
Low noise figure
•
Pb-free (RoHS compliant) package
BAT15-02LRH
BAT15-03W
BAT15-04W
!
BAT15-05W
!
BAT15-099
BAT15-099LRH
"
!
BAT15-099R
"
!
,
,
,
,
,
,
,
, !
, "
,
ESD
(
E
lectro
s
tatic
d
ischarge) sensitive device, observe handling precaution!
Type
BAT15-02LRH
BAT15-03W
BAT15-04W
BAT15-05W
BAT15-07LRH
BAT15-098LRH
BAT15-099
BAT15-099R
BAT15-099LRH
Package
TSLP-2-7
SOD323
SOT323
SOT323
TSLP-4-7
TSLP-4-7
SOT143
SOT143
TSLP-4-7
Configuration
single, leadless
single
series
common cathode
parallel pair, leadless
anti-parallel pair, leadless
anti-parallel pair
cross-over ring
anti-parallel pair, leadless
L
S
(nH)
0.4
1.8
1.4
1.4
0.4
0.4
2
2
0.4
Marking
NP
white P
S8s
S5s
NP
B
S5s
S6s
S5
1
2011-06-15
BAT15...
Maximum Ratings
at
T
A
= 25°C, unless otherwise specified
Symbol
Parameter
Diode reverse voltage
Forward current
Total power dissipation
BAT15-02LRH, -099LRHT
S
≤
76 °C
BAT15-03W,
T
S
≤
70 °C
BAT15-04W,
T
S
≤
68 °C
BAT15-05W,
T
S
≤
65 °C
BAT15-099,
T
S
≤
48 °C
BAT15-099R,
T
S
≤
67 °C
Junction temperature
Operating temperature range
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
1)
BAT15-02LRH, -099LRH
BAT15-03W
BAT15-04W
BAT15-05W
BAT15-099
BAT15-099R
1
For
Value
4
110
100
100
100
100
100
100
150
-55 ... 150
-55 ... 150
Unit
V
mA
mW
V
R
I
F
P
tot
T
j
T
op
T
stg
Symbol
R
thJS
°C
Value
≤
780
≤
795
≤
820
≤
850
≤
1020
≤
830
Unit
K/W
calculation of
R
thJA
please refer to Application Note Thermal Resistance
2
2011-06-15
BAT15...
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
DC Characteristics
Breakdown voltage
I
(BR)
= 100 µA
V
(BR)
V
F
Symbol
min.
4
Values
typ.
-
max.
-
Unit
V
Forward voltage
I
F
= 1 mA
I
F
= 10 mA
0.16
0.25
∆
V
F
0.23
0.32
-
0.32
0.41
20
mV
Forward voltage matching
1)
I
F
= 10 mA
AC Characteristics
Diode capacitance
V
R
= 0 V,
f
= 1 MHz, all other types
V
R
= 0 V,
f
= 1 MHz, BAT15-099R
Differential forward resistance
I
F
= 10 mA / 50 mA
1
∆V
-
C
T
-
-
R
F
-
-
-
5.5
0.35
0.5
-
pF
Ω
F
is the difference between lowest and highest
V
F
in a multiple diode component.
3
2011-06-15
BAT15...
Diode capacitance
C
T
=
ƒ
(
V
R
)
f
= 1MHz
EHD07082
Reverse current
I
R
=
ƒ
(
V
R
)
T
A
= Parameter
EHD07081
0.5
C
T
pF
0.4
10
3
Ι
R
µ
A
10
2
T
A
=125 C
85 C
0.3
10
1
25 C
0.2
0
10
0.1
0.0
10
-1
0
2
V
V
R
4
0
1
2
3
V
V
R
4
Forward current
I
F
=
ƒ
(
V
F
)
T
A
= Parameter
10
2
BAT 15-099R
EHD07077
Forward current
I
F
=
ƒ
(
T
S
)
BAT15-02LRH, BAT15-099LRH
120
mA
Ι
F
mA
100
10
1
T
A
= -40 ˚C
25 ˚C
85 ˚C
125 ˚C
10
0
I
F
90
80
70
60
50
40
10
-1
30
20
10
10
-2
0.0
0.5
V 1.0
V
F
0
0
15
30
45
60
75
90 105 120
°C
150
T
S
4
2011-06-15
BAT15...
Forward current
I
F
=
ƒ
(
T
S
)
BAT15-03W
120
mA
Forward current
I
F
=
ƒ
(
T
S
)
BAT15-04W
120
mA
100
90
80
100
90
80
I
F
70
60
50
40
30
20
10
0
0
15
30
45
60
75
90 105 120
°C
150
I
F
70
60
50
40
30
20
10
0
0
15
30
45
60
75
90 105 120
°C
150
T
S
T
S
Forward current
I
F
=
ƒ
(
T
S
)
BAT15-05W
120
mA
Forward current
I
F
=
ƒ
(
T
S
)
BAT15-099
120
mA
100
90
80
100
90
80
I
F
70
60
50
40
30
20
10
0
0
15
30
45
60
75
90 105 120
°C
150
I
F
70
60
50
40
30
20
10
0
0
15
30
45
60
75
90 105 120
°C
150
T
S
T
S
5
2011-06-15
Electronics Design Contest
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