T730N40TOF datasheet, PDF - EEWORLD Datasheet

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T730N40TOF: DescriptionSilicon Controlled Rectifier, 1730A I(T)RMS, 730000mA I(T), 4000V V(DRM), 4000V V(RRM), 1 Element; CategoryAnalog mixed-signal IC Trigger device; File Size284KB，10 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/; Environmental Compliance

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T730N40TOF Overview

Silicon Controlled Rectifier, 1730A I(T)RMS, 730000mA I(T), 4000V V(DRM), 4000V V(RRM), 1 Element

T730N40TOF Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Infineon
package instruction	DISK BUTTON, O-XXDB-X3
Reach Compliance Code	compliant
Is Samacsys	N
Nominal circuit commutation break time	400 µs
Configuration	SINGLE
Critical rise rate of minimum off-state voltage	1000 V/us
Maximum DC gate trigger current	300 mA
Maximum DC gate trigger voltage	2.5 V
Maximum holding current	300 mA
JESD-30 code	O-XXDB-X3
Maximum leakage current	200 mA
On-state non-repetitive peak current	17600 A
Number of components	1
Number of terminals	3
Maximum on-state current	730000 A
Maximum operating temperature	120 °C
Minimum operating temperature	-40 °C
Package body material	UNSPECIFIED
Package shape	ROUND
Package form	DISK BUTTON
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
Maximum rms on-state current	1730 A
Off-state repetitive peak voltage	4000 V
Repeated peak reverse voltage	4000 V
surface mount	YES
Terminal form	UNSPECIFIED
Terminal location	UNSPECIFIED
Maximum time at peak reflow temperature	NOT SPECIFIED
Trigger device type	SCR
Base Number Matches	1

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Netz-Thyristor

Phase Control Thyristor

Datenblatt / Data sheet

T730N

DRM

RRM

DSM

RSM

TRMSM

= 85 °C

= 55 °C,

= 180°sin, t

= 10 ms

TAVM

TRMS

= 25 °C °C, t

= 10 ms

= T

vj max

, t

= 10 ms

= 25 °C, t

= 10 ms

= T

vj max

, t

= 10 ms

DIN IEC 60747-6

f = 50 Hz, i

= 1 A, di

/dt = 1 A/µs

= T

vj max

, v

= 0,67 V

DRM

5.Kennbuchstabe / 5 letter F

TSM

I²t

(di

/dt)

(dv

/dt)

Elektrische Eigenschaften / Electrical properties

Höchstzulässige Werte / Maximum rated values

Periodische Vorwärts- und Rückwärts-Spitzensperrspannung T

= -40°C... T

vj max

enndaten

repetitive peak forward off-state and reverse voltages

Vorwärts-Stossspitzensperrspannung

non-repetitive peak forward off-state voltage

Rückwärts-Stossspitzensperrspannung

non-repetitive peak reverse voltage

Durchlassstrom-Grenzeffektivwert

maximum RMS on-state current

Dauergrenzstrom

average on-state current

Dauergrenzstrom

average on-state current

Durchlaßstrom-Effektivwert

RMS on-state current

Stossstrom-Grenzwert

surge current

Grenzlastintegral

I²t-value

Kritische Stromsteilheit

critical rate of rise of on-state current

Kritische Spannungssteilheit

critical rate of rise of off-state voltage

Charakteristische Werte / Characteristic values

Durchlassspannung

on-state voltage

Schleusenspannung

threshold voltage

Ersatzwiderstand

slope resistance

Durchlasskennlinie

200 A

≤

3700 A

on-state characteristic

vj max

Elektrische

Eigenschaften

= -40°C... T

= +25°C... T

vj max

3800

4000

4200

3800

4000

4200

3900

4100

4300

1840

730 A

1100 A

1730 A

17600 A

15800 A

1550 10³ A²s

1250 10³ A²s

80 A/µs

1000 V/µs

= T

vj max

, i

= 3,5 kA

= T

vj max

, i

= 750 A

= T

vj max

= T

vj max

= T

vj max

(TO)

max.

3,40 V

1,73 V

1,20 V

0,57 mΩ

⋅

ln ( i

⋅

Zündstrom

gate trigger current

Zündspannung

gate trigger voltage

Nicht zündender Steuerstrom

gate non-trigger current

Nicht zündende Steuerspannung

gate non-trigger voltage

Haltestrom

holding current

Einraststrom

latching current

Vorwärts- und Rückwärts-Sperrstrom

forward off-state and reverse current

Zündverzug

gate controlled delay time

= 25 °C, v

= 12V

= 25 °C, v

= 12V

= T

vj max

, v

= 12V

= T

vj max

, v

= 0,5 V

DRM

= T

vj max

, v

= 0,5 V

DRM

= 25°C, v

= 12V

1,237E-01

8,521E-04

2,933E-01

-3,533E-02

max.

300 mA

2,5 V

20 mA

10 mA

0,3 V

300 mA

2500 mA

200 mA

3,5 µs

= 25°C, v

= 12V, R

≥

Ω

= 1 A, di

/dt = 1 A/µs, t

= 20 µs

= T

vj max

= V

DRM

, v

= V

RRM

, i

DIN IEC 60747-6

= 25 °C, i

= 1 A, di

/dt = 1 A/µs

prepared by: H.Sandmann

approved by: M.Leifeld

date of publication:

revision:

2008-09-15

3.0

IFBIP D AEC / 2008-09-15, H.Sandmann

A 45/08

Seite/page

1/10

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Is it Rohs certified?	conform to	-	conform to	conform to	conform to	conform to	conform to	-
package instruction	DISK BUTTON, O-XXDB-X3	-	DISK BUTTON, O-XXDB-X3	DISK BUTTON, O-XXDB-X3	DISK BUTTON, O-XXDB-X3	DISK BUTTON, O-XXDB-X3	DISK BUTTON, O-XXDB-X3	,
Reach Compliance Code	compliant	-	compliant	compliant	compliant	compliant	compliant	compliant
Configuration	SINGLE	-	-	SINGLE	SINGLE	SINGLE	SINGLE	-
Maximum DC gate trigger current	300 mA	-	-	300 mA	300 mA	300 mA	300 mA	-
JESD-30 code	O-XXDB-X3	-	-	O-XXDB-X3	O-XXDB-X3	O-XXDB-X3	O-XXDB-X3	-
Number of components	1	-	-	1	1	1	1	-
Number of terminals	3	-	-	3	3	3	3	-
Package body material	UNSPECIFIED	-	-	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	-
Package shape	ROUND	-	-	ROUND	ROUND	ROUND	ROUND	-
Package form	DISK BUTTON	-	-	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON	-
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	-	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-
Maximum rms on-state current	1730 A	-	-	1730 A	1730 A	1730 A	1730 A	-
Off-state repetitive peak voltage	4000 V	-	-	3800 V	4200 V	3800 V	4200 V	-
Repeated peak reverse voltage	4000 V	-	-	3800 V	4200 V	3800 V	4200 V	-
surface mount	YES	-	-	YES	YES	YES	YES	-
Terminal form	UNSPECIFIED	-	-	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	-
Terminal location	UNSPECIFIED	-	-	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	-
Maximum time at peak reflow temperature	NOT SPECIFIED	-	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-
Trigger device type	SCR	-	-	SCR	SCR	SCR	SCR	SCR
Base Number Matches	1	-	1	1	1	1	1	1

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