RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
1N5400G
THRU
1N5408G
GLASS PASSIVATED
JUNCTION PLASTIC RECTIFIER
VOLTAGE RANGE 50 to 1000 Volts CURRENT 3.0 Amperes
FEATURES
*
*
*
*
*
High reliability
Low leakage
Low forward voltage drop
High current capability
Glass passivated junction
DO-201AD
MECHANICAL DATA
*
*
*
*
*
Case: Molded plastic
Epoxy: Device has UL flammability classification 94V-O
Lead: MIL-STD-202E method 208C guaranteed
Mounting position: Any
Weight: 1.18 grams
1.0 (25.4)
MIN.
.052 (1.3)
DIA.
.048 (1.2)
.375 (9.5)
.335 (8.5)
.220 (5.6)
.197 (5.0)
DIA.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
o
1.0 (25.4)
MIN.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS
(At T
A
= 25
o
C unless otherwise noted)
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
.375” (9.5mm) lead length at T
L
= 105
o
C
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Junction Capacitance (Note)
Typical Thermal Resistance
Operating and Storage Temperature Range
ELECTRICAL CHARACTERISTICS
(At T
A
= 25
o
C unless otherwise noted)
CHARACTERISTICS
Maximum Instantaneous Forward Voltage at 3.0A DC
o
Maximum DC Reverse Current
@T
A
= 25 C
at Rated DC Blocking Voltage
@T
A
= 100
o
C
Maximum Full Load Reverse Current Average, Full Cycle
.375” (9.5mm) lead length at T
L
= 75
o
C
NOTES : Measured at 1 MH
Z
and applied reverse voltage of 4.0 volts
SYMBOL
V
F
1N5400G 1N5401G 1N5402G 1N5404G 1N5406G 1N5407G 1N5408G UNITS
1.1
Volts
5.0
uAmps
300
30
uAmps
2002-12
SYMBOL
V
RRM
V
RMS
V
DC
I
O
I
FSM
C
J
R
θ
JA
T
J
, T
STG
1N5400G 1N5401G 1N5402G 1N5404G 1N5406G 1N5407G 1N5408G UNITS
50
35
50
100
70
100
200
140
200
400
280
400
3.0
150
40
30
-55 to + 150
0
600
420
600
800
560
800
1000
700
1000
Volts
Volts
Volts
Amps
Amps
pF
C/ W
0
C
I
R
RATING AND CHARACTERISTIC CURVES ( 1N5400G THRU 1N5408G )
FIG. 1 - TYPICAL FORWARD CURRENT
DERATING CURVE
FIG. 2 - TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
AVERAGE FORWARD CURRENT, (A)
INSTANTANEOUS FORWARD
CURRENT, (A)
5
4
3
2
1
0
0
25
50
75 100 125 150 175
LEAD TEMPERATURE, ( )
Single Phase
Half Wave 60Hz
Resistive or
Inductive Load
20
10
4
2
1.0
.4
.2
.1
.04
.02
.01
.6
.8
1.0
1.2
1.4 1.5
INSTANTANEOUS FORWARD VOLTAGE, (V)
FIG. 4 - TYPICAL REVERSE CHARACTERISTICS
10
4
1.0
.4
TJ = 25
TJ = 25
Pulse Width=300us
1% Duty Cycle
SURGE CURRENT
250
200
150
100
50
0
1
2
4 6 8 10 20 40 60 80100
NUMBER OF CYCLES AT 60Hz
8.3ms Single Half Sine-Wave
(JEDED Method)
INSTANTANEOUS REVERSE CURRENT, (uA)
PEAK FORWARD SURGE CURRENT, (A)
FIG. 3 - MAXIMUM NON-REPETITIVE FORWARD
.1
.04
.01
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
FIG. 5 - TYPICAL JUNCTION CAPACITANCE
JUNCTION CAPACITANCE, (pF)
200
100
60
40
20
10
6
4
2
1
.1
.2
.4
1.0 2 4
10 20 40 100
REVERSE VOLTAGE, ( V )
TJ = 25
RECTRON
Embedded System
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