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1N4003A1G

Description
Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-41,
CategoryDiscrete semiconductor    diode   
File Size236KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric View All

1N4003A1G Overview

Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-41,

1N4003A1G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTaiwan Semiconductor
package instructionO-PALF-W2
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
Other featuresHIGH RELIABILITY, LOW POWER LOSS
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeDO-41
JESD-30 codeO-PALF-W2
JESD-609 codee3
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage200 V
surface mountNO
Terminal surfacePURE TIN
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
CREAR BY ART
1N4001 - 1N4007
1.0 AMPS. Silicon Rectifiers
DO-41
Features
High efficiency, Low VF
High current capability
High reliability
High surge current capability
Low power loss
Green compound with suffix "G" on packing
code & prefix "G" on datecode
Mechanical Data
Case: Molded plastic
Epoxy: UL 94V-0 rate flame retardant
Lead: Pure tin plated, lead free, solderable per
MIL-STD-202, Method 208 guaranteed
Polarity: Color band denotes cathode
High temperature soldering guaranteed: 260℃/10s
Weight: 0.35 grams
Ordering Information (example)
Part No.
1N4001
Package
DO-41
Packing
3K / AMMO box
INNER
TAPE
52mm
Packing code
A0
Packing code
(Green)
A0G
Maximum Ratings and Electrical Characteristics
Rating at 25
ambient temperature unless otherwise specified.
Parameter
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Peak Forward Surge Current, 8.3 ms Single Half Sine-wave
Superimposed on Rated Load (JEDEC method)
Rating for Fusing (t<8.3ms)
Maximum Instantaneous Forward Voltage (Note 1)
@1A
Maximum Reverse Current @ Rated VR T
A
=25
T
A
=125℃
Maximum Full load Reverse Current, Full
cycle Average .375"(9.5mm) Lead Lenfth
@T
A
=75℃
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance
Operating Temperature Range
Storage Temperature Range
Note1: Pulse Test with PW=300 usec, 1% Duty Cycle
Symbol
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
I
2
T
V
F
I
R
1N
4001
50
35
50
1N
4002
100
70
100
1N
4003
200
140
200
1N
4004
400
280
400
1
30
3.7
1.0
5
50
30
10
65
6
15
1N
4005
600
420
600
1N
4006
800
560
800
1N
4007
1000
700
1000
Unit
V
V
V
A
A
A
2
S
V
uA
I
R(AV)
Cj
R
θjA
R
θjC
R
θjL
T
J
T
STG
uA
pF
O
C/W
O
O
- 55 to + 150
- 55 to + 150
C
C
Note2: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
Version:G13
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