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1R5JH45

Description
Rectifier Diode,
CategoryDiscrete semiconductor    diode   
File Size90KB,2 Pages
ManufacturerEIC [EIC discrete Semiconductors]
Environmental Compliance
Download Datasheet Parametric View All

1R5JH45 Overview

Rectifier Diode,

1R5JH45 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerEIC [EIC discrete Semiconductors]
Reach Compliance Codecompliant
Is SamacsysN
Diode typeRECTIFIER DIODE
Base Number Matches1
1R5JH45
PRV : 600 Volts
Io : 1.5 Amperes
FEATURES :
*
*
*
*
*
*
*
High current capability
High surge current capability
High reliability
Low reverse current
Low forward voltage drop
Fast switching for high efficiency
Pb / RoHS Free
FAST RECOVERY
RECTIFIER DIODE
D2
1.00 (25.4)
MIN.
0.161 (4.1)
0.154 (3.9)
0.284 (7.2)
0.268 (6.8)
0.034 (0.86)
0.028 (0.71)
1.00 (25.4)
MIN.
MECHANICAL DATA :
* Case : D2 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.465 gram
Dimensions in inches and ( millimeters )
Rating at 25
°
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATING
Maximum Repetitive Peak Reverse Voltage
Maximum Average Forward Current
Maximum Peak One Cycle Surge Forward
SYMBOL
V
RRM
I
F(AV)
I
FSM
VALUE
600
1.5
50 ( 50Hz )
UNIT
V
A
A
Current ( Non-Repetitive )
Maximum Peak Forward Voltage at I
F
= 1.5 A
Maximum Repetitive Peak Reverse Current at V
RRM
Maximum Reverse Recovery Time ( Note 1 )
Thermal Resistance - Junction to Ambient
Junction Temperature Range
Storage Temperature Range
Note:
( 1 ) Reverse Recovery Test Conditions : I
F
= 1 A, di/dt = -30 A/
µ
s.
55 ( 60Hz )
V
F
I
R
Trr
R
θ
JA
T
J
T
STG
1.2
100
200
58
- 40 to + 150
- 40 to + 150
V
µA
ns
°C
/ W
°C
°C
Page 1 of 2
Rev. 02 : March 25, 2005

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