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1SS403(TH3HLS,F)

Description
Rectifier Diode, 1 Element, 0.1A, 250V V(RRM), Silicon
CategoryDiscrete semiconductor    diode   
File Size288KB,4 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric Compare View All

1SS403(TH3HLS,F) Overview

Rectifier Diode, 1 Element, 0.1A, 250V V(RRM), Silicon

1SS403(TH3HLS,F) Parametric

Parameter NameAttribute value
MakerToshiba Semiconductor
package instructionR-PDSO-G2
Reach Compliance Codeunknown
ECCN codeEAR99
Is SamacsysN
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-PDSO-G2
Number of components1
Number of terminals2
Maximum operating temperature125 °C
Maximum output current0.1 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Maximum power dissipation0.2 W
GuidelineAEC-Q101
Maximum repetitive peak reverse voltage250 V
Maximum reverse recovery time0.06 µs
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Base Number Matches1
1SS403
TOSHIBA Diode Silicon Epitaxial Planar Type
1SS403
High Voltage Switching Applications
AEC-Q101 Qualified (Note1)
Two-pin small packages are suitable for higher mounting densities.
Excellent in forward current and forward voltage
characteristics
:
V
F (2)
= 0.90V (typ.)
Fast reverse recovery time
Small total capacitance
:
t
rr
= 60ns (max)
:
C
T
= 1.5pF (typ.)
Unit: mm
Note1: For detail information, please contact to our sales.
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Maximum (peak) reverse voltage
Reverse voltage
Maximum (peak) forward current
Average forward current
Surge current (10ms)
Power dissipation
Junction temperature
Storage temperature range
Symbol
V
RM
V
R
I
FM
I
O
I
FSM
P
T
j
T
stg
Rating
250
200
300
100
2
200 *
125
−55
to 125
Unit
V
V
mA
mA
A
mW
°C
°C
JEDEC
JEITA
1-1E1A
TOSHIBA
Weight: 0.0045g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: When mounted on a glass epoxy board PCB: 20 mm × 20 mm,
with copper pad 4 mm × 4 mm.
Electrical Characteristics
(Ta = 25°C)
Characteristic
Symbol
V
F (1)
V
F (2)
I
R (1)
Reverse current
I
R (2)
Total capacitance
Reverse recovery time
C
T
t
rr
Test
Circuit
Test Condition
I
F
= 10mA
I
F
= 100mA
V
R
= 50V
V
R
= 200V
V
R
= 0, f = 1MHz
I
F
= 10mA (Fig. 1)
Min
Typ.
0.72
0.90
1.5
10
Max
1.0
V
1.2
0.1
1.0
3.0
60
pF
ns
μA
Unit
Forward voltage
Start of commercial production
1998-10
1
2015-01-09

1SS403(TH3HLS,F) Related Products

1SS403(TH3HLS,F) 1SS403,H3F 1SS403,H3F(T 1SS403(TH3MAA,F) 1SS403(TH3SANAM,F)
Description Rectifier Diode, 1 Element, 0.1A, 250V V(RRM), Silicon Reverse recovery time (trr): 60ns DC reverse withstand voltage (Vr): 200V Average rectified current (Io): 100mA Forward voltage drop (Vf): 1.2V @ 100mA 0.1A, 250V, SILICON, SIGNAL DIODE Rectifier Diode, 1 Element, 0.1A, 250V V(RRM), Silicon Rectifier Diode
Maker Toshiba Semiconductor - Toshiba Semiconductor Toshiba Semiconductor Toshiba Semiconductor
package instruction R-PDSO-G2 - ROHS COMPLIANT, USC, 1-1E1A, 2 PIN R-PDSO-G2 -
Reach Compliance Code unknown - unknown unknown unknown
ECCN code EAR99 - EAR99 EAR99 -
Is Samacsys N - N N N
Configuration SINGLE - SINGLE SINGLE -
Diode component materials SILICON - SILICON SILICON -
Diode type RECTIFIER DIODE - RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
JESD-30 code R-PDSO-G2 - R-PDSO-G2 R-PDSO-G2 -
Number of components 1 - 1 1 -
Number of terminals 2 - 2 2 -
Maximum operating temperature 125 °C - 125 °C 125 °C -
Maximum output current 0.1 A - 0.1 A 0.1 A -
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY -
Package shape RECTANGULAR - RECTANGULAR RECTANGULAR -
Package form SMALL OUTLINE - SMALL OUTLINE SMALL OUTLINE -
Maximum power dissipation 0.2 W - 0.2 W 0.2 W -
Guideline AEC-Q101 - AEC-Q101 AEC-Q101 -
Maximum repetitive peak reverse voltage 250 V - 250 V 250 V -
Maximum reverse recovery time 0.06 µs - 0.06 µs 0.06 µs -
surface mount YES - YES YES -
Terminal form GULL WING - GULL WING GULL WING -
Terminal location DUAL - DUAL DUAL -
Base Number Matches 1 - 1 1 1

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