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1SS193

Description
Rectifier Diode, 1 Element, 0.1A, Silicon, PLASTIC PACKAGE-3
CategoryDiscrete semiconductor    diode   
File Size84KB,2 Pages
ManufacturerRectron
Environmental Compliance  
Download Datasheet Parametric View All

1SS193 Overview

Rectifier Diode, 1 Element, 0.1A, Silicon, PLASTIC PACKAGE-3

1SS193 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerRectron
package instructionPLASTIC PACKAGE-3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current0.1 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)265
Maximum power dissipation0.15 W
Certification statusNot Qualified
Maximum reverse recovery time0.004 µs
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
1SS193
SOT-23 SWITCHING DIODE
FEATURES
* Power dissipation
P
D
:
150 mW(Tamb=25
O
C)
* Forward current
I
F
:
100 mA
* Reverse voltage
V
R
: 80 V
* Operating and storage junction temperature range
T
J
,T
stg
: -55
O
Cto+150
O
C
SOT-23
MECHANICAL DATA
*
*
*
*
*
Case: Molded plastic
Epoxy: UL 94V-O rate flame retardant
Lead: MIL-STD-202E method 208C guaranteed
Mounting position: Any
Weight: 0.008 gram
0.055(1.40)
0.047(1.20)
0.006(0.15)
0.003(0.08)
0.020(0.50)
0.012(0.30)
0.043(1.10)
0.035(0.90)
0.004(0.10)
0.000(0.00)
0.020(0.50)
0.012(0.30)
0.100(2.55)
0.089(2.25)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified.
0.019(2.00)
0.071(1.80)
1
0.118(3.00)
3
0.110(2.80)
2
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS
( @ T
A
= 25 C unless otherwise noted )
CHARACTERISTICS
Reverse Breakdown Voltage (I
R
=100µA)
Reverse voltage leakage current (V
R
=80V)
Forward voltage (I
F
=100mA)
Diode capacitance (V
R
=0V,f=1MHz)
Reverse recovery time
SYMBOL
V
(BR)
I
R
V
F
C
D
t
rr
MIN.
80
-
-
-
-
TYP.
-
-
-
-
-
MAX.
-
0.5
1.2
3
4
UNITS
V
µA
V
pF
ns
2006-3
o
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