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24C02B-ESN

Description
1K/2K 5.0V I 2 C ⑩ Serial EEPROM
File Size107KB,12 Pages
ManufacturerMicrochip
Websitehttps://www.microchip.com
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24C02B-ESN Overview

1K/2K 5.0V I 2 C ⑩ Serial EEPROM

M
FEATURES
24C01B/02B
PACKAGE TYPES
PDIP
NC
NC
NC
Vss
1
24C01B/02B
2
3
4
8
7
6
5
Vcc
WP
SCL
SDA
1K/2K 5.0V I
2
C
Serial EEPROM
• Single supply with 5.0V operation
• Low power CMOS technology
- 1 mA active current typical
- 10
µ
A standby current typical at 5.0V
- 5
µ
A standby current typical at 5.0V
• Organized as a single block of 128 bytes (128 x 8)
or 256 bytes (256 x 8)
• 2-wire serial interface bus, I
2
C compatible
• 100 kHz compatibility
• Self-timed write cycle (including auto-erase)
• Page-write buffer for up to 8 bytes
• 2 ms typical write cycle time for page-write
• Hardware write protect for entire memory
• Can be operated as a serial ROM
• ESD protection > 3,000V
• 1,000,000 ERASE/WRITE cycles guaranteed
Data retention > 200 years
• 8 pin DIP or SOIC package
• Available for extended temperature ranges
- Automotive (E):
-40˚C to +125˚C
SOIC
NC
NC
NC
Vss
1
24C01B/02B
2
3
4
8
7
6
5
Vcc
WP
SCL
SDA
DESCRIPTION
The Microchip Technology Inc. 24C01B and 24C02B
are 1K bit and 2K bit Electrically Erasable PROMs. The
devices are organized as a single block of 128 x 8 bit or
256 x 8 bit memory with a 2-wire serial interface. The
24C01B and 24C02B also have page-write capability
for up to 8 bytes of data. The 24C01B and 24C02B are
available in the standard 8-pin DIP and an 8-pin surface
mount SOIC package.
These devices are for extended temperature
applications only. It is recommended that all other
applications use Microchip’s 24LC01B/02B.
BLOCK DIAGRAM
WP
HV GENERATOR
I/O
CONTROL
LOGIC
MEMORY
CONTROL
LOGIC
XDEC
EEPROM
ARRAY
PAGE LATCHES
SDA SCL
YDEC
V
CC
V
SS
SENSE AMP
R/W CONTROL
I
2
C is a trademark of Philips Corporation.
©
1997 Microchip Technology Inc.
Preliminary
DS21233A-page 1

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