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24C02SC-S08

Description
24C01C-P 24C01C-IP 24C01C-EP 24C01C-SN 24C01C-ISN 24C01C-ESN 24C01C-ST 24C01C-IST 24C01C-EST
File Size70KB,12 Pages
ManufacturerMicrochip
Websitehttps://www.microchip.com
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24C02SC-S08 Overview

24C01C-P 24C01C-IP 24C01C-EP 24C01C-SN 24C01C-ISN 24C01C-ESN 24C01C-ST 24C01C-IST 24C01C-EST

24C01SC/02SC
1K/2K 5.0V I
2
C Serial EEPROMs for Smart Cards
FEATURES
• ISO Standard 7816 pad locations
• Low power CMOS technology
- 1 mA active current typical
- 10
µ
A standby current typical at 5.5V
• Organized as a single block of 128 bytes (128 x 8)
or 256 bytes (256 x 8)
• Two-wire serial interface bus, I
2
C
compatible
• 100 kHz and 400 kHz compatibility
• Self-timed write cycle (including auto-erase)
• Page-write buffer for up to 8 bytes
• 2 ms typical write cycle time for page-write
• ESD protection > 4 kV
• 1,000,000 E/W cycles guaranteed
• Data retention > 200 years
• Available for extended temperature ranges
- Commercial (C):
0
°
C to +70
°
C
DIE LAYOUT
V
SS
V
CC
SDA
DC
SCL
BLOCK DIAGRAM
HV GENERATOR
DESCRIPTION
The Microchip Technology Inc. 24C01SC and
24C02SC are 1K-bit and 2K-bit Electrically Erasable
PROMs with bondpad positions optimized for smart
card applications. The devices are organized as a sin-
gle block of 128 x 8-bit or 256 x 8-bit memory with a
two-wire serial interface. The 24C01SC and 24C02SC
also have page-write capability for up to 8 bytes of data.
I/O
CONTROL
LOGIC
MEMORY
CONTROL
LOGIC
XDEC
EEPROM
ARRAY
PAGE LATCHES
SDA SCL
YDEC
V
CC
V
SS
SENSE AMP
R/W CONTROL
I
2
C is a trademark of Philips Corporation.
©
1996 Microchip Technology Inc.
Preliminary
This document was created with FrameMaker 4 0 4
DS21170A-page 1

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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