Target data sheet
SPPX1N60S5
SPBX1N60S5
Cool MOS™ Power Transistor
•
Worldwide best
R
DS(on)
in TO 220
•
N-Channel
•
Enhancement mode
•
Ultra low gate charge
•
Avalanche rated
•
dv/dt rated
•
150°C operating temperature
Type
SPPX1N60S5
SPBX1N60S5
1
G
2
D
3
S
V
DS
600 V
I
D
20.7 A
R
DS(on)
190 mΩ
Marking
X1N60S5
Package
P-TO220-3-1
P-TO263-3-2
Ordering Code
-
-
Maximum Ratings,
at
Tj
= 25 °C, unless otherwise specified
Parameter
Drain source voltage
Continuous drain current
Symbol
Value
600
20.7
13.1
Unit
V
A
V
DSS
I
D
T
C
= 25 °C
T
C
= 100 °C
Pulsed drain current
T
C
= 25 °C
Avalanche energy, single pulse
I
D
= 20.7 A,
V
DD
= 50 V,
R
GS
= 25
Ω
Avalanche current (periodic, limited by
jmax
)
T
Avalanche energy (10 kHz, limited by
jmax
)
T
Reverse diode dv/dt
I
D puls
E
AS
I
AR
E
AR
dv/dt
42
690
tbd
tbd
6
mJ
A
mJ
KV/µs
I
S
= 20.7 A,
V
DS
<V
DSS
, di/dt = 100 A/µs,
T
jmax
= 150 °C
Gate source voltage
Power dissipation,
T
C
= 25 °C
Operating temperature
Storage temperature
IEC climatic category; DIN IEC 68-1
V
GS
P
tot
T
j
T
stg
±20
208
-55 ...+150
-55 ... +150
55/150/56
V
W
°C
Semiconductor Group
1
03 / 1998
Target data sheet
SPPX1N60S5
SPBX1N60S5
Electrical Characteristics
Parameter
at
Tj
= 25 °C, unless otherwise specified
Thermal Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient
(Leaded and through-hole packages)
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
1)
Static Characteristics
Drain- source breakdown voltage
Symbol
min.
Values
typ.
-
62
max.
0.6
-
Unit
R
thJC
R
thJA
R
thJA
-
-
K/W
-
-
tbd
35
-
-
V
(BR)DSS
V
GS(th)
600
-
-
V
V
GS
= 0 V,
I
D
= 0.25 mA
Gate threshold voltage,V
GS
=
V
DS
I
D
= 1 mA,
T
j
= 25 °C
3.5
tbd
4.5
-
-
0.5
-
10
tbd
5.5
-
µA
-
-
-
0.1
1
tbd
100
190
nA
mΩ
I
D
= 1 mA,
T
j
= 150 °C
Zero gate voltage drain current,V
DS
=V
DSS
I
DSS
V
GS
= 0 V,
T
j
= -40 °C
V
GS
= 0 V,
T
j
= 25 °C
V
GS
= 0 V,
T
j
= 150 °C
Gate-source leakage current
I
GSS
R
DS(on)
-
-
V
GS
= 20 V,
V
DS
= 0 V
Drain-Source on-state resistance
V
GS
= 10 V,
I
D
= 13.1 A
1 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain
connection. PCB is vertical without blown air.
Semiconductor Group
2
03 / 1998
Target data sheet
Electrical Characteristics
Parameter
at
Tj
= 25 °C, unless otherwise specified
Characteristics
Transconductance
Symbol
min.
SPPX1N60S5
SPBX1N60S5
Values
typ.
tbd
3000
1900
100
tbd
tbd
max.
-
tbd
tbd
tbd
tbd
-
ns
S
pF
Unit
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
-
-
-
-
-
-
V
DS
≥
2
*
I
D *
R
DS(on)max
,
I
D
= 13.1 A
Input capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
Output capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
Reverse transfer capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
Turn-on delay time
V
DD
= 350 V,
V
GS
= 10 V,
I
D
= 20.7 A
Rise time
V
DD
= 350 V,
V
GS
= 10 V,
I
D
= 20.7 A,
R
G
= 3.6
Ω
Turn-off delay time
V
DD
= 350 V,
V
GS
= 10 V,
I
D
= 20.7 A,
R
G
= 3.6
Ω
Fall time
V
DD
= 350 V,
V
GS
= 10 V,
I
D
= 20.7 A,
R
G
= 3.6
Ω
t
d(off)
-
tbd
tbd
t
f
-
tbd
-
Semiconductor Group
3
03 / 1998
Target data sheet
Electrical Characteristics
Parameter
at
Tj
= 25 °C, unless otherwise specified
Gate Charge Characteristics
Gate-source charge
Symbol
min.
SPPX1N60S5
SPBX1N60S5
Values
typ.
tbd
tbd
100
max.
-
-
tbd
nC
Unit
Q
gs
Q
gd
Q
G
-
-
-
I
D
= 20.7 A,
V
DD
= 400 V
Gate-drain charge
I
D
= 20.7 A,
V
DD
= 400 V
Total gate charge
V
DD
= 400 V,
I
D
= 20.7 A,
V
GS
= 0 to 10 V
Reverse Diode
Continuous source current
I
S
I
SM
V
SD
t
rr
Q
rr
-
-
-
-
-
-
-
tbd
tbd
4.5
20.7
42
1.2
-
-
A
T
C
= 25 °C
Pulsed source current
T
C
= 25 °C
Inverse diode forward voltage
V
GS
= 0 V,
I
F
= 20.7 A
Reverse recovery time
V
R
= 100 V,
I
F
=I
S
, di
F
/dt = 100 A/µs
Reverse recovery charge
V
R
= 100 V,
I
F =
l
S
, di
F
/dt = 100 A/µs
V
ns
µC
Semiconductor Group
4
03 / 1998
Target data sheet
SPPX1N60S5
SPBX1N60S5
Edition 7.97
Published by Siemens AG,
Bereich Halbleiter Vetrieb,
Werbung, Balanstraße 73,
81541 München
© Siemens AG 1997
All Rights Reserved.
Attention please!
As far as patents or other rights of third parties are concerned, liability is only assumed for components,
not for applications, processes and circuits implemented within components or assemblies.
The information describes a type of component and shall not be considered as warranted characteristics.
Terms of delivery and rights to change design reserved.
For questions on technology, delivery and prices please contact the Semiconductor Group Offices in Germany
or the Siemens Companies and Representatives worldwide (see address list).
Due to technical requirements components may contain dangerous substances. For information on the types
in question please contact your nearest Siemens Office, Semiconductor Group.
Siemens AG is an approved CECC manufacturer.
Packing
Please use the recycling operators known to you. We can also help you - get in touch with your nearest sales
office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport.
For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to
invoice you for any costs incurred.
Components used in life-support devices or systems must be expressly authorized for such purpose!
Critical components
1
of the Semiconductor Group of Siemens AG, may only be used in life-support devices or
systems
2
with the express written approval of the Semiconductor Group of Siemens AG.
1)A critical component is a component used in a life-support device or system whose failure can reasonably be
expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of
that device or system.
2)Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or
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Errata sheet to target data sheet SPPX1N60S5:
Samples with datecode
≤
830:
•
Reduced avalanche rating
•
Reverse diode dv/dt
≤
4 KV/µs
•
Gate threshold voltageV
GS(th)
: upper limit 6V
Semiconductor Group
5
03 / 1998
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