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JANTXV1N6132A

Description
Trans Voltage Suppressor Diode, 500W, 91.2V V(RWM), Bidirectional, 1 Element, Silicon,
CategoryDiscrete semiconductor    diode   
File Size214KB,3 Pages
ManufacturerSENSITRON
Websitehttp://www.sensitron.com/
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Trans Voltage Suppressor Diode, 500W, 91.2V V(RWM), Bidirectional, 1 Element, Silicon,

JANTXV1N6132A Parametric

Parameter NameAttribute value
MakerSENSITRON
package instructionO-XALF-W2
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
Minimum breakdown voltage114 V
Breakdown voltage nominal value120 V
Shell connectionISOLATED
Maximum clamping voltage165 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeO-XALF-W2
Maximum non-repetitive peak reverse power dissipation500 W
Number of components1
Number of terminals2
Package body materialUNSPECIFIED
Package shapeROUND
Package formLONG FORM
polarityBIDIRECTIONAL
Maximum power dissipation3 W
Certification statusQualified
Maximum repetitive peak reverse voltage91.2 V
surface mountNO
technologyAVALANCHE
Terminal formWIRE
Terminal locationAXIAL
Base Number Matches1
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 5074, REV. D
1N6105A thru 1N6137A
500W Bi-directional TVS
A
V AI L AB L E AS
1 N , J AN , J AN T X , J ANT XV
JANS
JAN EQUIVALENT *
SJ*, SX*, SV*, SS*
Bi-directional Transient Voltage Suppressor Diode, 500W
Qualified per MIL-PRF-19500/516
FEATURES / BENEFITS
Hermetic, non-cavity glass package
Category I Metallurgically bonded
All devices are 100% hot solder dipped
JAN/ JANTX/JANTXV available per MIL-PRF-19500/516
“JANS Plus” removes atypical/out of family V
F
Operating and Storage Temperature: -55 C to +175 C
o
o
ELECTRICAL CHARACTERISTICS
SERIES
TYPE
500W
1N6105A/US
1N6106A/US
1N6107A/US
1N6108A/US
1N6109A/US
1N6110A/US
1N6111A/US
1N6112A/US
1N6113A/US
1N6114A/US
1N6115A/US
1N6116A/US
1N6117A/US
1N6118A/US
1N6119A/US
1N6120A/US
1N6121A/US
1N6122A/US
1N6123A/US
1N6124A/US
1N6125A/US
1N6126A/US
1N6127A/US
1N6128A/US
1N6129A/US
1N6130A/US
1N6131A/US
1N6132A/US
1N6133A/US
1N6134A/US
1N6135A/US
1N6136A/US
1N6137A/US
MIN
BREAKDOWN
VOLTAGE
V(BR) @ I(BR)
Vdc
8.65
9.50
10.45
11.40
12.35
14.25
15.20
17.10
19.00
20.9
22.8
25.7
28.5
31.4
34.2
37.1
40.9
44.7
48.5
53.2
58.9
64.6
71.3
77.9
86.5
95.0
104.5
114.0
123.5
142.5
152
171
190
mA dc
150
125
125
100
100
75
75
65
65
50
50
50
40
40
30
30
30
25
25
20
20
20
20
15
15
12
12
10
10
8.0
8.0
5.0
5.0
WORKING
PEAK REVERSE
VOLTAGE
VRWM
Vdc
6.9
7.6
8.4
9.1
9.9
11.4
12.2
13.7
15.2
16.7
18.2
20.6
22.8
25.1
27.4
29.7
32.7
35.8
38.8
42.6
47.1
51.7
56.0
62.2
69.2
76.0
83.6
91.2
98.8
114.0
121.6
136.8
152.0
MAXIMUM
REVERSE
CURRENT
IR1
Adc
20
20
20
20
20
20
20
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
MAX. CLAMP.
VOLTAGE
VC @ IP
tp = 1ms
V(pk)
13.4
14.5
15.6
16.9
18.2
21.0
22.3
25.1
27.7
30.5
33.3
37.4
41.6
45.7
49.9
53.6
59.1
64.6
70.1
77.0
85.3
97.1
103.1
112.8
125.1
137.6
151.3
165.1
178.8
206.3
218.4
245.7
273.0
MAX. PEAK
PULSE
CURRENT
IP
A(pk)
37.3
34.5
32.0
29.6
27.5
23.8
22.4
19.0
18.0
16.4
15.0
13.4
12.0
10.9
10.0
9.3
8.5
7.7
7.1
6.5
5.9
5.1
4.8
4.4
4.0
3.6
3.3
3.0
2.8
2.4
2.3
2.0
1.8
MAX. TEMP.
COEFFICIENT
V(BR)
% /
C
.06
.07
.07
.07
.08
.08
.08
.085
.085
.085
.09
.09
.09
.095
.095
.095
.095
.095
.095
.095
.100
.100
.100
.100
.100
.100
.100
.100
.105
.105
.105
.110
.110
©2016 Sensitron Semiconductor
221 West Industry Court
Deer Park, NY 11729-4681
Phone (631) 586 7600 Fax (631) 242 9798
www.sensitron.com
sales@sensitron.com
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