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BZX55C16BSB

Description
Zener Diode, 16V V(Z), 2.01%, 0.5W, Silicon, Unidirectional, DO-35, ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2
CategoryDiscrete semiconductor    diode   
File Size273KB,5 Pages
ManufacturerRectron
Environmental Compliance  
Download Datasheet Parametric View All

BZX55C16BSB Overview

Zener Diode, 16V V(Z), 2.01%, 0.5W, Silicon, Unidirectional, DO-35, ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2

BZX55C16BSB Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerRectron
Parts packaging codeDO-35
package instructionO-LALF-W2
Contacts2
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
Maximum dynamic impedance40 Ω
JEDEC-95 codeDO-35
JESD-30 codeO-LALF-W2
JESD-609 codee3
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)265
polarityUNIDIRECTIONAL
Maximum power dissipation0.5 W
Certification statusNot Qualified
Nominal reference voltage16 V
surface mountNO
technologyZENER
Terminal surfaceMatte Tin (Sn)
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Maximum voltage tolerance2.01%
Working test current5 mA
Base Number Matches1
BZX55C-BS
SERIES
4.7V to 36V
SILICON PLANAR ZENER DIODE
FEATURES
* Zener Voltage Range 4.7 to 36 Volts
* DO-35 Glass Axial Package
* Best Suited For Industrial, Military and Space Applications.
* The Glass Passivated Diode Chip in The Hermetically Sealed
Glass Package with Double Studs Provides Excellent Stability
and Reliability.
DO-35
.022 (0.55)
DIA.
.007 (0.46)
1.50 (38.1)
1.00 (25.4)
.200 (5.08)
.120 (3.05)
.089 (2.28)
DIA.
.060 (1.53)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified.
1.50 (38.1)
1.00 (25.4)
Dimensions in inches and (millimeters)
ABSOLUTE MAXIMUM RATINGES
( @ T
A
= 25 C unless otherwise noted )
RATINGS
Power Dissipation (Note 1)
Surge Power Dissipation Pulse Width =10 mS
Junction Temperature
Storage Temperature
THERMAL RESISTANCE
( @ T
A
= 25
o
C unless otherwise noted )
DESCRIPTION
Thermal Resistance Junction to Ambient (Note 1)
SYMBOL
R
q
JA
TYP.
300
UNITS
o
o
SYMBOL
P
TA
P
S
T
J
T
STG
VALUE
500
5.0
175
-65 to +175
UNITS
mW
W
o
o
C
C
C/W
ELECTRICAL CHARACTERISTICS
( @ T
A
= 25
o
C unless otherwise noted )
CHARACTERISTICS
Forward Voltage at I
F=
100mA
Notes: 1. On infinite heatsink with 4mm lead length.
2. "Fully RoHS Compliant", "100% Sn plating (Pb-free)".
SYMBOL
V
F
TYP.
1.0
UNITS
Volts
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