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2N7303

Description
34A, 250V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE
CategoryDiscrete semiconductor    The transistor   
File Size69KB,2 Pages
ManufacturerIntersil ( Renesas )
Websitehttp://www.intersil.com/cda/home/
Download Datasheet Parametric View All

2N7303 Overview

34A, 250V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE

2N7303 Parametric

Parameter NameAttribute value
Objectid1404820684
package instructionFLANGE MOUNT, O-MBFM-P2
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresRADIATION HARDENED
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage250 V
Maximum drain current (ID)34 A
Maximum drain-source on-resistance0.12 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-204AE
JESD-30 codeO-MBFM-P2
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Package body materialMETAL
Package shapeROUND
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal formPIN/PEG
Terminal locationBOTTOM
Transistor component materialsSILICON
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