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2N7307H

Description
6A, 100V, 0.55ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA
CategoryDiscrete semiconductor    The transistor   
File Size55KB,1 Pages
ManufacturerIntersil ( Renesas )
Websitehttp://www.intersil.com/cda/home/
Download Datasheet Parametric View All

2N7307H Overview

6A, 100V, 0.55ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA

2N7307H Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Objectid1407163094
Reach Compliance Codenot_compliant
ECCN codeEAR99
Other featuresRADIATION HARDENED
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage100 V
Maximum drain current (Abs) (ID)6 A
Maximum drain current (ID)6 A
Maximum drain-source on-resistance0.55 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-204AA
JESD-30 codeO-MBFM-P2
JESD-609 codee0
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialMETAL
Package shapeROUND
Package formFLANGE MOUNT
Polarity/channel typeP-CHANNEL
Maximum power consumption environment75 W
Maximum power dissipation(Abs)75 W
Maximum pulsed drain current (IDM)18 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formPIN/PEG
Terminal locationBOTTOM
Transistor component materialsSILICON
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