2N7308R datasheet, PDF - EEWORLD Datasheet

2N7308R: Description5A, 100V, 0.55ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF; CategoryDiscrete semiconductor The transistor; File Size142KB，4 Pages; ManufacturerIntersil ( Renesas ); Websitehttp://www.intersil.com/cda/home/

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2N7308R Overview

5A, 100V, 0.55ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Objectid	1407163163
Reach Compliance Code	not_compliant
ECCN code	EAR99
Other features	RADIATION HARDENED
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V
Maximum drain current (Abs) (ID)	5 A
Maximum drain current (ID)	5 A
Maximum drain-source on-resistance	0.55 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-205AF
JESD-30 code	O-MBCY-W3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	P-CHANNEL
Maximum power consumption environment	25 W
Maximum power dissipation(Abs)	25 W
Maximum pulsed drain current (IDM)	15 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	TIN LEAD
Terminal form	WIRE
Terminal location	BOTTOM
Transistor component materials	SILICON
Maximum off time (toff)	204 ns
Maximum opening time (tons)	180 ns

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