2N7309D datasheet, PDF - EEWORLD Datasheet

2N7309D: Description6A, 100V, 0.565ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AA; CategoryDiscrete semiconductor The transistor; File Size144KB，4 Pages; ManufacturerIntersil ( Renesas ); Websitehttp://www.intersil.com/cda/home/

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2N7309D Overview

6A, 100V, 0.565ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AA

Parameter Name	Attribute value
Objectid	1407161246
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	RADIATION HARDENED
Shell connection	ISOLATED
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V
Maximum drain current (ID)	6 A
Maximum drain-source on-resistance	0.565 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-257AA
JESD-30 code	R-MSFM-P3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	METAL
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	P-CHANNEL
Maximum power consumption environment	50 W
Maximum pulsed drain current (IDM)	18 A
Certification status	Not Qualified
surface mount	NO
Terminal form	PIN/PEG
Terminal location	SINGLE
Transistor component materials	SILICON
Maximum off time (toff)	204 ns
Maximum opening time (tons)	214 ns

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