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1N3015B

Description
Zener Diode, 200V V(Z), 5%, 10W, Silicon, Unidirectional, DO-4, HERMETIC SEALED, METAL PACKAGE-1
CategoryDiscrete semiconductor    diode   
File Size465KB,5 Pages
ManufacturerCentral Semiconductor
Download Datasheet Parametric View All

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1N3015B Overview

Zener Diode, 200V V(Z), 5%, 10W, Silicon, Unidirectional, DO-4, HERMETIC SEALED, METAL PACKAGE-1

1N3015B Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Parts packaging codeDO-4
package instructionO-MUPM-D1
Contacts1
Reach Compliance Codenot_compliant
ECCN codeEAR99
Is SamacsysN
Other featuresGENERAL PURPOSE
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
Maximum dynamic impedance300 Ω
JEDEC-95 codeDO-4
JESD-30 codeO-MUPM-D1
JESD-609 codee0
Number of components1
Number of terminals1
Maximum operating temperature175 °C
Package body materialMETAL
Package shapeROUND
Package formPOST/STUD MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Maximum power dissipation10 W
Certification statusNot Qualified
Nominal reference voltage200 V
surface mountNO
technologyZENER
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formSOLDER LUG
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
Maximum voltage tolerance5%
Working test current12 mA
Base Number Matches1
This Material Copyrighted By Its Respective Manufacturer
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