JANTXV1N6626U datasheet, PDF - EEWORLD Datasheet

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JANTXV1N6626U: DescriptionRectifier Diode, 1 Phase, 1 Element, 2A, 200V V(RRM), Silicon, HERMETIC, MELF-B, 2 PIN; CategoryDiscrete semiconductor diode; File Size100KB，2 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com

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Rectifier Diode, 1 Phase, 1 Element, 2A, 200V V(RRM), Silicon, HERMETIC, MELF-B, 2 PIN

JANTXV1N6626U Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Parts packaging code	MELF
package instruction	O-LELF-R2
Contacts	2
Reach Compliance Code	compliant
Is Samacsys	N
application	ULTRA FAST RECOVERY
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.35 V
JESD-30 code	O-LELF-R2
Maximum non-repetitive peak forward current	75 A
Number of components	1
Phase	1
Number of terminals	2
Maximum operating temperature	175 °C
Maximum output current	2 A
Package body material	GLASS
Package shape	ROUND
Package form	LONG FORM
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
Guideline	MIL
Maximum repetitive peak reverse voltage	200 V
Maximum reverse recovery time	0.03 µs
surface mount	YES
Terminal form	WRAP AROUND
Terminal location	END
Maximum time at peak reflow temperature	NOT SPECIFIED
Base Number Matches	1

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package instruction	O-LELF-R2	O-LELF-R2	HERMETIC, MELF-B, 2 PIN	O-LELF-R2	O-LELF-R2	O-LELF-R2	,	HERMETIC, MELF-B, 2 PIN
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant
Number of terminals	2	2	2	2	2	2	2	2
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	RECTANGULAR PACKAGE	ROUND
surface mount	YES	YES	YES	YES	YES	YES	NO	YES
Is it lead-free?	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	-	Contains lead
Parts packaging code	MELF	MELF	MELF	MELF	MELF	MELF	-	MELF
Contacts	2	2	2	2	2	2	-	2
application	ULTRA FAST RECOVERY	ULTRA FAST RECOVERY	ULTRA FAST RECOVERY	ULTRA FAST RECOVERY	ULTRA FAST RECOVERY	ULTRA FAST RECOVERY	-	ULTRA FAST RECOVERY
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	-	ISOLATED
Configuration	SINGLE	-	SINGLE	-	SINGLE	SINGLE	-	SINGLE
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	-	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	-	RECTIFIER DIODE
Maximum forward voltage (VF)	1.35 V	-	1.4 V	-	1.35 V	1.6 V	-	1.4 V
JESD-30 code	O-LELF-R2	O-LELF-R2	O-LELF-R2	O-LELF-R2	O-LELF-R2	O-LELF-R2	-	O-LELF-R2
Maximum non-repetitive peak forward current	75 A	75 A	75 A	75 A	75 A	60 A	-	75 A
Number of components	1	-	1	-	1	1	-	1
Phase	1	1	1	1	1	1	-	1
Maximum operating temperature	175 °C	-	175 °C	-	175 °C	175 °C	85 °C	175 °C
Maximum output current	2 A	3 A	1.4 A	3 A	2 A	1.4 A	-	1.4 A
Package body material	GLASS	GLASS	GLASS	GLASS	GLASS	GLASS	-	GLASS
Package form	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	-	LONG FORM
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	-	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	-	Not Qualified
Guideline	MIL	MIL	MIL	MIL	MIL	MIL	-	MIL
Maximum repetitive peak reverse voltage	200 V	-	800 V	-	600 V	1000 V	-	900 V
Maximum reverse recovery time	0.03 µs	0.05 µs	0.05 µs	0.05 µs	0.03 µs	0.06 µs	-	0.05 µs
Terminal form	WRAP AROUND	WRAP AROUND	WRAP AROUND	WRAP AROUND	WRAP AROUND	WRAP AROUND	-	WRAP AROUND
Terminal location	END	END	END	END	END	END	-	END
Maximum time at peak reflow temperature	NOT SPECIFIED	-	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED
Base Number Matches	1	1	1	1	1	1	-	-
Maker	-	Microsemi	Microsemi	Microsemi	Microsemi	Microsemi	-	Microsemi

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