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1N5401_NL

Description
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, DO-201AD, LEAD FREE, DO-201AD, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size51KB,3 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Download Datasheet Parametric View All

1N5401_NL Overview

Rectifier Diode, Avalanche, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, DO-201AD, LEAD FREE, DO-201AD, 2 PIN

1N5401_NL Parametric

Parameter NameAttribute value
Parts packaging codeDO-201AD
package instructionO-PALF-W2
Contacts2
Reach Compliance Codeunknown
ECCN codeEAR99
Is SamacsysN
applicationGENERAL PURPOSE
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeDO-201AD
JESD-30 codeO-PALF-W2
JESD-609 codee3
Maximum non-repetitive peak forward current200 A
Number of components1
Phase1
Number of terminals2
Maximum output current3 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Maximum power dissipation6.25 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage100 V
surface mountNO
technologyAVALANCHE
Terminal surfaceMATTE TIN
Terminal formWIRE
Terminal locationAXIAL
Base Number Matches1
1N5400-1N5408
1N5400 - 1N5408
Features
3.0 ampere operation at T
A
= 75°C
with no thermal runaway.
High current capability.
Low leakage.
DO-201AD
COLOR BAND DENOTES CATHODE
General Purpose Rectifiers
Absolute Maximum Ratings*
Symbol
V
RRM
I
F(AV)
I
FSM
T
A
= 25°C unless otherwise noted
Parameter
5400
Maximum Repetitive Reverse
Voltage
Average Rectified Forward Current,
.375 " lead length @ T
A
= 75°C
Non-repetitive Peak Forward Surge
Current
8.3 ms Single Half-Sine-Wave
Storage Temperature Range
Operating Junction Temperature
50
5401
100
5402
200
5403
300
Value
5404
400
3.0
5405
500
5406
600
5407
800
5408
1000
Units
V
A
200
-55 to +150
-55 to +150
A
°C
°C
T
stg
T
J
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Symbol
P
D
R
.
JA
Parameter
Power Dissipation
Thermal Resistance, Junction to Ambient
Value
6.25
20
Units
W
°C/W
Electrical Characteristics
Symbol
V
F
I
rr
I
R
T
A
= 25°C unless otherwise noted
Parameter
5400
Forward Voltage @ 3.0 A
Maximum Full Load Reverse
Current, Full Cycle
T
A
= 105°C
Reverse Current @ rated V
R
T
A
= 25°C
T
A
= 100°C
Toatal Capacitance
V
R
= 4.0 V, f = 1.0 MHz
5401
5402
5403
Device
5404
1.2
0.5
5.0
500
30
5405
5406
5407
5408
Units
V
mA
uA
uA
pF
C
T
.
2001 Fairchild Semiconductor Corporation
1N5400-1N5408, Rev C1, June 2006
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