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1MBI600U4B-120

Description
Insulated Gate Bipolar Transistor, 800A I(C), 1200V V(BR)CES, N-Channel, MODULE-4
CategoryDiscrete semiconductor    The transistor   
File Size419KB,13 Pages
ManufacturerFuji Electric Co., Ltd.
Download Datasheet Parametric View All

1MBI600U4B-120 Overview

Insulated Gate Bipolar Transistor, 800A I(C), 1200V V(BR)CES, N-Channel, MODULE-4

1MBI600U4B-120 Parametric

Parameter NameAttribute value
Parts packaging codeMODULE
package instructionFLANGE MOUNT, R-XUFM-X4
Contacts4
Reach Compliance Codeunknown
Is SamacsysN
Shell connectionISOLATED
Maximum collector current (IC)800 A
Collector-emitter maximum voltage1200 V
ConfigurationSINGLE WITH BUILT-IN DIODE
JESD-30 codeR-XUFM-X4
Number of components1
Number of terminals4
Maximum operating temperature150 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
Transistor component materialsSILICON
Nominal off time (toff)410 ns
Nominal on time (ton)320 ns
Base Number Matches1
SPECIFICATION
Device Name
Type Name
Spec. No.
:
:
:
IGBT MODULE
1MBI600U4B-120
MS5F 6062
Mar. 09 ’05
Mar. 09 ’05
S.Miyashita
T.Miyasaka
Y.Seki
K.Yamada
MS5F6062
1
a
13
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