3. Absolute Maximum Ratings ( at Tc= 25 C unless otherwise specified )
Items
Collector-Emitter voltage
Gate-Emitter voltage
Symbols
VCES
VGES
Ic
Collector current
Icp
-Ic
-Ic pulse
Pc
Tj
Tstg
Continuous
1ms
Tc=25 C
o
Tc=80 C
o
Tc=25 C
o
Tc=80 C
o
o
Conditions
1ms
Collector Power Dissipation
1 device
Junction temperature
Storage temperature
Isolation
between terminal and copper base (*1)
Viso
AC : 1min.
voltage
Mounting (*2)
Screw
Terminals (*3)
-
Torque
Terminals (*4)
(*1) All terminals should be connected together when isolation test will be done.
(*2) Recommendable Value : Mounting 3.5 to 4.5 Nm (M6)
(*3) Recommendable Value : Terminals 10.0 to 11.0 Nm (M8)
(*4) Recommendable Value : Terminals 1.3 to 1.7 Nm (M4)
o
Maximum
Units
Ratings
1200
V
±20
V
800
600
1600
A
1200
600
1200
3570
W
+150
o
C
-40 to +125
2500
4.5
11.0
1.7
VAC
Nm
4. Electrical characteristics ( at Tj= 25 C unless otherwise specified )
Items
Zero gate voltage
collector current
Gate-Emitter
leakage current
Gate-Emitter
threshold voltage
Collector-Emitter
saturation voltage
Input capacitance
Turn-on time
Turn-off time
Symbols
ICES
IGES
VGE(th)
VCE(sat)
(terminal)
VCE(sat)
(chip)
Cies
ton
tr
tr(i)
toff
tf
VF
(terminal)
VF
(chip)
trr
Conditions
VCE=1200V
VGE=0V
VCE=0V
VGE=±20V
VCE=20V
Ic=600mA
Ic=600A
VGE=15V
Characteristics
min.
typ.
max.
-
-
4.5
-
-
6.5
a
a
Units
mA
nA
V
8.0
1600
8.5
a
Tj=25 C
o
Tj=125 C
o
Tj=25 C
o
Tj=125 C
VCE=10V,VGE=0V,f=1MHz
Vcc=600V
Ic=600A
VGE=±15V
RG=1.1Ω
IF=600A
VGE=0V
Tj=25 C
o
Tj=125 C
o
Tj=25 C
o
Tj=125 C
o
o
Forward on voltage
Reverse recovery time
IF=600A
Lead resistance,
R lead
terminal-chip (*5)
(*5) Biggest internal terminal resistance among arm.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
a
a
2.20
2.40
1.90
2.10
67
0.32
0.10
0.03
0.41
0.07
1.90
2.00
1.65
1.75
-
0.30
a
2.35
-
2.05
-
-
1.20
0.60
-
1.00
0.30
2.05
-
1.80
-
0.35
-
V
nF
us
V
us
mΩ
MS5F6062
4
13
a
H04-004-03a
5. Thermal resistance characteristics
Items
Thermal resistance(1device)
Symbols
Rth(j-c)
IGBT
FWD
Conditions
min.
-
-
Characteristics
typ.
max.
-
0.035
-
0.054
Units
o
Contact Thermal resistance
Rth(c-f)
with Thermal Compound
-
0.0063
-
(1 device) (*6)
(*6) This is the value which is defined mounting on the additional cooling fin with thermal compound.
C/W
6. Indication on module
Logo of production
1MBI600U4B-120
600A 1200V
Lot.No.
7. Applicable category
Place of manufacturing (code)
This specification is applied to IGBT-Module named 1MBI600U4B-120.
8. Storage and transportation notes
• The module should be stored at a standard temperature of 5 to 35
o
C and humidity of 45 to 75% .
• Store modules in a place with few temperature changes in order to avoid condensation on the
module surface.
• Avoid exposure to corrosive gases and dust.
• Avoid excessive external force on the module.
• Store modules with unprocessed terminals.
• Do not drop or otherwise shock the modules when transporting.
9. Definitions of switching time
½
½
90%
0V
L
0V
V
GE
t
r r
I
r r
90%
½
½
V
CE
V cc
Ic
90%
R
G
V
GE
V
CE
Ic
0V
0A
t
r ( i )
t
r
t
o n
t
o f f
½
½
Ic
10%
10%
V
CE
t
f
10%
10. Packing and Labeling
Display on the packing box
- Logo of production
- Type name
- Lot No
- Products quantity in a packing box
MS5F6062
5
13
a
H04-004-03a