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1MBH05D-120

Description
Insulated Gate Bipolar Transistor, 10A I(C), 1200V V(BR)CES, N-Channel, TO-3PL, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size357KB,12 Pages
ManufacturerFuji Electric Co., Ltd.
Download Datasheet Parametric View All

1MBH05D-120 Overview

Insulated Gate Bipolar Transistor, 10A I(C), 1200V V(BR)CES, N-Channel, TO-3PL, 3 PIN

1MBH05D-120 Parametric

Parameter NameAttribute value
Parts packaging codeTO-3PL
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts2
Reach Compliance Codeunknown
Is SamacsysN
Maximum collector current (IC)10 A
Collector-emitter maximum voltage1200 V
ConfigurationSINGLE WITH BUILT-IN DIODE
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Transistor component materialsSILICON
Nominal off time (toff)600 ns
Nominal on time (ton)1200 ns
Base Number Matches1
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