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1N5393GP

Description
Rectifier Diode, 1 Phase, 1 Element, 1.5A, 200V V(RRM), Silicon, DO-15, PLASTIC PACKAGE-2
CategoryDiscrete semiconductor    diode   
File Size77KB,3 Pages
ManufacturerMicro Commercial Components (MCC)
Download Datasheet Parametric Compare View All

1N5393GP Overview

Rectifier Diode, 1 Phase, 1 Element, 1.5A, 200V V(RRM), Silicon, DO-15, PLASTIC PACKAGE-2

1N5393GP Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Parts packaging codeDO-15
package instructionPLASTIC PACKAGE-2
Contacts2
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
applicationGENERAL PURPOSE
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeDO-15
JESD-30 codeO-PALF-W2
JESD-609 codee0
Maximum non-repetitive peak forward current50 A
Number of components1
Phase1
Number of terminals2
Maximum output current1.5 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage200 V
surface mountNO
Terminal surfaceTIN LEAD
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
MCC
Features
Low Current Leakage
Low Forward Voltage
High Current Capability
Low Cost
Glass Passivated Junction
  omponents
21201 Itasca Street Chatsworth

  !"#
$ %    !"#
1N5391GP
THRU
1N5399GP
1.5 Amp Glass
Passivated Rectifier
50 - 1000 Volts
DO-15
Maximum Ratings
Operating Temperature: -55°C to +150°C
Storage Temperature: -55°C to +150°C
Maximum Thermal Resistance; 26°C/W Junction To Lead
Microsemi
Catalog
Number
Device
Marking
Maximum
Recurrent
Peak
Reverse
Voltage
50V
100V
200V
300V
400V
500V
600V
800V
1000V
Maximum
RMS
Voltage
Maximum
DC
Blocking
Voltage
50V
100V
200V
300V
400V
500V
600V
800V
1000V
D
1N5391GP
1N5392GP
1N5393GP
1N5394GP
1N5395GP
1N5396GP
1N5397GP
1N5398GP
1N5399GP
---
---
---
---
---
---
---
---
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35V
70V
140V
210V
280V
350V
420V
560V
700V
A
Cathode
Mark
B
D
C
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
I
F(AV)
1.5A
T
A
= 70°C
Current
Peak Forward Surge
I
FSM
50A
8.3ms, half sine
Current
Maximum
1.4V
I
FM
= 1.5A;
Instantaneous
V
F
Forward Voltage
T
J
= 25°C*
Maximum DC
Reverse Current At
I
R
5.0µA
T
A
= 25°C
Rated DC Blocking
300µA
T
A
= 100°C
Voltage
Typical Junction
C
J
15pF
Measured at
Capacitance
1.0MHz, V
R
=4.0V
*Pulse test: Pulse width 300
µsec,
Duty cycle 1%
DIMENSIONS
INCHES
MIN
.230
.104
.026
1.000
MM
MIN
5.80
2.60
.70
25.40
DIM
A
B
C
D
MAX
.300
.140
.034
---
MAX
7.60
3.60
.90
---
NOTE
www.mccsemi.com

1N5393GP Related Products

1N5393GP 1N5395GP
Description Rectifier Diode, 1 Phase, 1 Element, 1.5A, 200V V(RRM), Silicon, DO-15, PLASTIC PACKAGE-2 Rectifier Diode, 1 Phase, 1 Element, 1.5A, 400V V(RRM), Silicon, DO-15, PLASTIC PACKAGE-2
Is it Rohs certified? incompatible incompatible
Parts packaging code DO-15 DO-15
package instruction PLASTIC PACKAGE-2 PLASTIC PACKAGE-2
Contacts 2 2
Reach Compliance Code compliant compliant
ECCN code EAR99 EAR99
Is Samacsys N N
application GENERAL PURPOSE GENERAL PURPOSE
Shell connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode component materials SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE
JEDEC-95 code DO-15 DO-15
JESD-30 code O-PALF-W2 O-PALF-W2
JESD-609 code e0 e0
Maximum non-repetitive peak forward current 50 A 50 A
Number of components 1 1
Phase 1 1
Number of terminals 2 2
Maximum output current 1.5 A 1.5 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND
Package form LONG FORM LONG FORM
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Certification status Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 200 V 400 V
surface mount NO NO
Terminal surface TIN LEAD TIN LEAD
Terminal form WIRE WIRE
Terminal location AXIAL AXIAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
Base Number Matches 1 1

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