FLC317MG-4
High Voltage - High Power GaAs FET
FEATURES
・
High Output Power: P1dB=34.8dBm(Typ.)
・
High Gain: G1dB=9.5dB(Typ.)
・
High PAE:
ηadd=37%(Typ.)
・
Proven Reliability
・
Hermetic Metal/Ceramic Package
DESCRIPTION
The FLC317MG-4 is a power GaAs FET that is designed for
general purpose application in the C-Band frequency range as it
provides superior power,gain,and efficiency.
EUD stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Case Temperature Tc=25
o
C)
Item
Symbol
Rating
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
V
DS
V
GS
PTot
T
stg
T
ch
15
-5
15
-65 to +175
175
Unit
V
V
W
o
C
o
C
RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25
o
C)
Item
Symbol
Condition
Limit
DC Input Voltage
Forward Gate Current
Reverse Gate Current
Operating channel temperature
VDS
IGF
IGR
Tch
RG=100
Ω
RG=100
Ω
10
<19.4
>-2.0
145
Unit
V
mA
mA
o
C
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25
o
C)
Limit
Item
Symbol
Condition
Min. Typ. Max.
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate-Source Breakdown Voltage
Unit
mA
mS
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Power-added Efficiency
Thermal Resistance
ESD
Class
III
IDSS
gm
Vp
VGSO
P1dB
G1dB
ηadd
Rth
VDS=5V,VGS=0V
VDS=5V,IDS=800mA
VDS=5V,IDS=60mA
IGS=-60uA
V
DS
=10V
f=4.2GHz
IDS(DC)=0.6IDSS(Typ)
Channel to Case
-
-
-1.0
-5.0
33.5
8.5
-
-
1200
600
-2.0
-
34.8
9.5
37.0
8.0
1800
-
-3.5
-
-
-
-
10.0
V
V
dBm
dB
%
o
C/W
2000 V~
CASE STYLE: MG
Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5kΩ)
Edition 1.1
May 2005
1
FLC317MG-4
High Voltage - High Power GaAs FET
For further information please contact :
Eudyna Devices USA Inc.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
FAX: (408) 428-9111
www.fcsi.fujitsu.com
CAUTION
Fujitsu Compound Semiconductor Products contain
gallium arsenide
(GaAs)
which can be hazardous to the human body and the
environment.
For safety, observe the following procedures:
・
not put these products into the mouth.
Do
Eudyna Devices Europe Ltd.
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
Phone: +44 (0) 1628 504800
FAX: +44 (0) 1628 504888
・
not alter the form of this product into a gas, powder, or liquid
Do
through burning, crushing, or chemical processing as these by-
products
are dangerous to the human body if inhaled, ingested, or swallowed.
・
Observe government laws and company regulations when discarding
this product. This product must be discarded in accordance with
methods specified by applicable hazardous waste procedures.
Eudyna Devices Asia Pte. Ltd. Hong Kong Branch
Rm.1101,Ocean Centre, 5 Canton Road, Tsim Sha Tsui Kowloon, Hong kong
Tel: +852-2377-0227
Fax: +852-2377-3921
Eudyna Devices Inc.
1000 Kamisukiahara, showa-cho, Nakakomagun, Yamanashi
409-3883, Japan
(Kokubo Industrial Park)
Tel +81-55-275-4411
Fax +81-55-275-9461
Sales Division
1,Kanai-cho,Sakae-ku,Yokohama,244-0845,Japan
Tel +81-45-853-8156
Fax +81-45-853-8170
5
Analogue and Mixed Signal
京公网安备 11010802033920号
EEWORLD
