1SMB5926 thru 1SMB5956
Taiwan Semiconductor
CREAT BY ART
FEATURES
- Low profile package
- Ideal for automated placement
- Glass passivated junction
- Built-in strain relief
- Low inductance
- Moisture sensitivity level: level 1, per J-STD-020
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
Surface Mount Silicon Zener Diodes
MECHANICAL DATA
Case:
DO-214AA (SMB)
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - green compound (halogen-free)
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test,
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Polarity:
Indicated by cathode band
Weight:
0.1 g (approximately)
DO-214AA (SMB)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
DC power dissipation at T
L
=75℃, measure at
zero lead length (Note 1) derate above 75℃
DC power dissipation at T
A
=25℃
Derate above 25℃
Thermal Resistance from Junction to Lead
Thermal Resistance from Junction to Ambient
Operating junction temperature range
Storage temperature range
SYMBOL
P
D
P
D
R
θJL
R
θJA
T
J
T
STG
Value
3
40
550
4.4
25
226
- 55 to +150
- 55 to +150
UNIT
Watts
mW/℃
mW
mW/℃
℃/W
℃/W
O
O
C
C
Note 1: Mounted on Cu-Pad size 5mm x 5mm x 1.6mm on PCB
ORDERING INFORMATION
PART NO.
AEC-Q101
QUALIFIED
1SMBxxxx
(Note 1)
Prefix "H"
PACKING
CODE
R5
R4
M4
GREEN COMPOUND
CODE
SMB
Suffix "G"
SMB
SMB
850 / 7" Plastic reel
3,000 / 13" Paper reel
3,000 / 13" Plastic reel
PACKAGE
PACKING
Note 1: "xxxx" defines voltage from 11V (1SMB5926) to 200V (1SMB5956)
EXAMPLE
PREFERRED P/N
1SMB5926 R5
1SMB5926 R5G
1SMB5926HR5
PART NO.
1SMB5926
1SMB5926
1SMB5926
H
AEC-Q101
QUALIFIED
PACKING CODE
R5
R5
R5
G
Green compound
AEC-Q101 qualified
GREEN COMPOUND
CODE
DESCRIPTION
Document Number: DS_D1405067
Version: H14
1SMB5926 thru 1SMB5956
Taiwan Semiconductor
CREAT BY ART
RATINGS AND CHARACTERISTICS CURVES
(TA=25℃ unless otherwise noted)
Nominal Zener Voltage
Device
(Note 1)
Device
Marking
Code
Min
1SMB5926
1SMB5927
1SMB5928
1SMB5929
1SMB5930
1SMB5931
1SMB5932
1SMB5933
1SMB5934
1SMB5935
1SMB5936
1SMB5937
1SMB5938
1SMB5939
1SMB5940
1SMB5941
1SMB5942
1SMB5943
1SMB5944
1SMB5945
1SMB5946
1SMB5947
1SMB5948
1SMB5949
1SMB5950
1SMB5951
1SMB5952
1SMB5953
1SMB5954
1SMB5955
1SMB5956
Notes:
1. Tolerance and type number designation the type numbers listed indicate a tolerance of 5%
2. Zener voltage (Vz) measurement
Nominal Zener voltage is measured with the device junction in thermal equilibrium with ambient temperature 25℃
3. Zener impedance (Zz) derivation : Z
ZT
and Z
ZK
are measured by dividing the AC voltage
drop across the device by the AC current applied.
The specified limits are for Iz(AC) = 0.1 Iz(DC) with the AC frequency = 60 Hz
926B
927B
928B
929B
930B
931B
932B
933B
934B
935B
936B
937B
938B
939B
940B
941B
942B
943B
944B
945B
946B
947B
948B
949B
950B
951B
952B
953B
954B
955B
956B
10.45
11.40
12.35
14.25
15.20
17.10
19.00
20.90
22.80
25.65
28.50
31.35
34.20
37.05
40.85
44.65
48.45
53.20
58.90
64.60
71.25
77.90
86.45
95.00
104.50
114.00
123.50
142.50
152.00
171.00
190.00
Vz@Iz
V
Nom
(Notes 2)
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
82
91
100
110
120
130
150
160
180
200
Max
11.55
12.60
13.65
15.75
16.80
18.90
21.00
23.10
25.20
28.35
31.50
34.65
37.80
40.95
45.15
49.35
53.55
58.80
65.10
71.40
78.75
86.10
95.55
105.00
115.50
126.00
136.50
157.50
168.00
189.00
210.00
34.1
31.2
28.8
25.0
23.4
20.8
18.7
17.0
15.6
13.9
12.5
11.4
10.4
9.6
8.7
8.0
7.3
6.7
6.0
5.5
5.0
4.6
4.1
3.7
3.4
3.1
2.9
2.5
2.3
2.1
1.9
5.5
6.5
7.0
9.0
10.0
12.0
14.0
17.5
19
23
26
33
38
45
53
67
70
86
100
120
140
160
200
250
300
360
450
600
700
900
1200
550
550
550
600
600
650
650
650
700
700
750
800
850
900
950
1000
1100
1300
1500
1700
2000
2500
3000
3100
4000
4500
5000
6000
6500
7000
8000
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
8.4
9.1
9.9
11.4
12.2
13.7
15.2
16.7
18.2
20.6
22.8
25.1
27.4
29.7
32.7
35.8
38.8
42.6
47.1
51.7
56.0
62.2
69.2
76.0
83.6
91.2
98.8
114.0
121.6
136.8
152.0
136
125
115
100
94
83
75
68
63
56
50
45
42
38
35
32
29
27
24
22
20
18
16
15
13
12
11
10
9
8
7
Test
Current
I
ZT
mA
Ω
Zener Impedance
(Note 3)
Z
ZT
@I
ZT
Ω
Z
ZK
@I
ZK
mA
μA
Leakage Current
I
R
@V
R
V
Maximum DC
Zener Current
I
ZM
mA(DC)
Document Number: DS_D1405067
Version: H14
1SMB5926 thru 1SMB5956
Taiwan Semiconductor
CREAT BY ART
FIG. 1 STEADY STATE POWER DERATING
4
FIG.2 MAXIMUM SURGE POWER
1000
P
D
, MAXIMUM POWER DISSIPATION(WATTS)
3
2
TL
P
PK
, PEAK SURGE POWER(W)
100
125
150
100
1
TA
0
0
25
50
75
10
0
1
10
100
T, TEMPERATURE(℃)
PW, PULSE WIDTH(ms)
FIG. 3 ZENER VOLTAGE - TO 12 VOLTAGES
10
9
FIG.4 ZENER VOLTAGE 14 TO 200 VOLTAGES
100
O
VZ
, TEMPERATURE COEFFICIENT (mV/℃)
O
VZ
, TEMPERATURE COEFFICIENT
(mV/℃)
8
7
6
5
4
3
2
1
0
-1
-2
-3
-4
2
3
Vz@IZT
Vz@IZT
4
5
6
7
8
9
10
11
12
10
10
100
V
Z
, ZENER VOLTAGE(V)
V
z
, ZENER VOLTAGE (V)
FIG. 5 Vz = 3.3 THRU 10 VOLTS
100
100
FIG. 6 Vz = 12 THRU 82 VOLTS
I
Z
, ZENER CURRENT (mA)
I
Z
, ZENER CURRENT (mA)
10
10
1
1
0.1
0
1
2
3
4
5
6
7
8
9
10
Vz, ZENER VOLTAGE (V)
0.1
0
10
20
30
40
50
60
70
80
90
100
Vz, ZENER VOLTAGE (V)
Document Number: DS_D1405067
Version: H14
1SMB5926 thru 1SMB5956
Taiwan Semiconductor
CREAT BY ART
FIG. 7 EFFECT OF ZENER VOLTAGE
FIG. 8 EFFECT OF ZENER CURRENT
1000
Vz=150V
TA=25℃
Iz(rms)=0.1 Iz(dc)
1000
Zz, DYNAMIC IMPEDANCE (Ω)
Zz, DYNAMIC IMPEDANCE (Ω)
100
Iz(dc) = 1mA
100
91V
62V
10
10mA
10
22V
12V
6.8V
Iz(ms) = Iz(dc)
20mA
1
10
Iz, ZENER CURRENT (mA)
100
1
0.1
1
10
100
1000
Iz. ZENER TEST CURRENT(mA)
FIG.9 CAPACITANCE CURVE
1000
MEASURED@
ZERO BIAS
P
PK
, PEAK POWER (KW)
10
FIG. 10 TYPICAL PULSE RATING CURVE
C, CAPACITANCE(pF)
NONREPETITIVE, EXPONENTIAL
PULSE WAVEFORM, TA=25℃
1
100
MEASURED @
Vz/2
0.1
10
1
10
BREAKDOWN VOLTAGE (V)
100
0.01
0.01
0.1
1
10
Tp. PULSE WIDTH (ms)
FIG. 11 PULSE WAVEFORM
120
110
100
I
PPM
, PEAK PULSE CURRENT (%)
90
80
70
60
50
40
30
20
10
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
T, TIME(ms)
td
HALF VALUE - Ipp/2
10/1000
μs
WAVEFORM
AS DEFINED BY R.E.A.
≦10μs
PEAK VALUE
Ippm
PW(ID) IS DEFINED AS THE POINT
WHERE THE PEAK CURRENT
DECAYS TO 50% OF Ipp
I
PPM
, PEAK PULSE CURRENT (%)
120
110
100
90
80
70
60
50
40
30
20
10
0
0
T = 8μs
0.1 IPEAK
0.01
0.02
FIG. 12 PULSE WAVEFORM
8/20
μs
WAVEFORM
AS DEFINED BY ANSI C62.1
AND IEC 801.5
0.9 IPEAK
0.5 IPEAK
0.03
0.04
0.05
0.06
0.07
0.08
0.09
0.1
T, TIME(ms)
Document Number: DS_D1405067
Version: H14
1SMB5926 thru 1SMB5956
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS
DO-214AA (SMB)
DIM.
A
B
C
D
E
F
G
H
Unit (mm)
Min
1.95
4.25
3.48
1.99
0.90
5.10
0.10
0.15
Max
2.10
4.75
3.73
2.61
1.41
5.30
0.20
0.31
Unit (inch)
Min
0.077
0.167
0.137
0.078
0.035
0.201
0.004
0.006
Max
0.083
0.187
0.147
0.103
0.056
0.209
0.008
0.012
SUGGESTED PAD LAYOUT
Symbol
A
B
C
D
E
Unit (mm)
2.3
2.5
4.3
1.8
6.8
Unit (inch)
0.091
0.098
0.169
0.071
0.268
MARKING DIAGRAM
P/N =
G=
YW =
F=
Device Marking Code
Green Compound
Date Code
Factory Code
Document Number: DS_D1405067
Version: H14
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