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AP4953GM

Description
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
File Size199KB,5 Pages
ManufacturerADPOW
Websitehttp://www.advancedpower.com/
Download Datasheet View All

AP4953GM Overview

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP4953GM
RoHS-compliant Product
Advanced Power
Electronics Corp.
Simple Drive Requirement
Low Gate Charge
Fast Switching
D1
G2
S2
D2
D1
D2
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BV
DSS
R
DS(ON)
I
D
-30V
53mΩ
-5A
SO-8
S1
G1
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
The SO-8 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
G1
D1
D2
G2
S1
S2
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
3
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Rating
- 30
+20
-5
-4
- 20
2
0.016
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
3
Value
62.5
Unit
℃/W
Data and specifications subject to change without notice
1
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