Technical Information - CECC & ESA/ESCC Approved Products
Approval of the manufacturing facility
The facility is approved to manufacture non-solid electrolytic tantalum
capacitors under BS 9000, IECQ, CECC and MIL-STD-790 for
MIL-PRF-39006/-. The facility is registered on the Defence Contracts List
as satisfying the requirements of DEF STAN 05-21.
electrodes
•
All-Tantalumhigh ripple current
•
Withstands
•
Long life reliability
capability
•
Reverse voltage CECC 30 202 001
•
Approved to BS
to ESA/ESCC 3003/005
•
Approved to BS CECC 30 202 005
Approved
•
Approved to QC 300 202 GB 0001
•
Specifications
The TH capacitor can be offered to the following specifications covering
both the European range of values and the American range:
BS CECC 30 202 001, 30 202 005, 30202.012, QC 300 202 GB 0001.
Arcotronics In-House Specification 1000 SD 00007.
The TH series is GAM T1 listed in France.
Severity of Tests
The BS CECC 30 202 001 test sequence includes tests at the
following severities.
Environmental Classification
Sealing (Tracer Gas)
Rapid change of temperature
Vibration
Bump
Low Air Pressure
Endurances 85˚C and 125˚C
Reverse voltage
:
:
:
:
:
:
:
:
55/125/56
1 x 10
-8
mbar din
3
/s
30 cycles and 500 cycles
20g. (150mm or 196m/s
2
for 30 hours)
4000 bumps at 390 m/s
2
2 KN/m
2
(20mbar)
2000 & 10000 hours
3 volts for 125 hours
Performance Curves & Technical Data
Publication 5008 lists the technical data for the TH range and includes:
Constructional details/performance curves: the variation of electrical
parameters with temperature and frequency/In-rush currents/long term
storage/parameter variation on endurance.
Usage at Higher Temperatures
Temperatures in excess of the upper category temperature of 125°C, to a
maximum of 200°C, can be sustained with appropriate derating. The 200°C
range is illustrated on pages 17 to 22.
Table 1- Ripple Current Ratings: Multiplying Factors
Frequency of
applied ripple current
Ambient still air
100%
% of 85˚C
rated peak
voltage
90%
80%
70%
120Hz
Temp ˚C
800Hz
Temp ˚C
1kHz
Temp ˚C
10khz
Temp ˚C
40khz
Temp ˚C
100kHz
Temp ˚C
≤
55°
.60
.60
.60
.60
.60
85° 105° 125°
.39
.46
.52
.58
.60
-
-
.35
.44
.46
-
-
-
-
.27
≤
55°
.71
.71
.71
.71
.71
85°
.43
.55
.62
.69
.71
105° 125°
-
-
.42
.52
.55
-
-
-
-
.32
≤
55°
.72
.72
.72
.72
.72
85° 105° 125°
.45
.55
.62
.70
.72
-
-
.42
.52
.55
-
-
-
-
.32
≤
55°
.88
.88
.88
.88
.88
85°
.55
.67
.76
.85
.88
105° 125° 55°
-
-
.52
.64
.68
-
-
-
-
.40
1.0
1.0
1.0
1.0
1.0
85°
.63
.77
.87
.97
1.0
105° 125°
-
-
.59
.73
.77
-
-
-
-
.45
≤
55°
1.1
1.1
1.1
1.1
85° 105°
.69
.85
.96
1.1
-
-
.65
.80
.85
125°
-
-
-
-
.50
1.1 1.07
≤
66 2/3%√
Basic Criteria
Ripple current rating is expressed in amps. r.m.s. for a particular frequency,
temperature and applied voltage.
Maximum temperature rise above ambient is 50°C up to 85°C ambient,
with linear derating above 85°C to a maximum temperature rise of 10°C at
125°C ambient.
Cooling conditions will affect the capability of the capacitor to handle
ripple current.
The sum of the peak a.c. and d.c. voltages must not exceed the rated
forward or reverse voltage at the appropriate temperature.
The maximum RMS ripple current which can be applied is shown on
pages 4 to 6 for each value of capacitance and voltage rating. This is
shown at a frequency of 40 kHz and a temperature of 85°C. Multiplying
factors for other frequencies, temperatures and allowing for variation in
applied peak voltage are shown in Table 1 above.
The ripple current causes heating due to I R losses, where R is the ESR of
the capacitor. Based on an assumption that the maximum temperature rise
is 50°C in still air and allowing for the upper temperature rating of the
capacitor, multiplying factors are derived at different temperatures.
As the ESR is frequency dependent there are also multiplying factors
for frequencies.
2
2
Selection Chart - CECC Range
Rated
Voltage
@ 85˚C
Category
Voltage
@ 125˚C
Rated
Capacitance
µF
2.7
3.3
3.5
3.6
3.9
4.0
4.7
5.0
5.6
6.8
8.0
8.2
9.0
10
12
14
15
18
20
22
25
27
30
33
39
40
43
47
50
56
60
68
70
82
86
100
110
120
140
150
160
170
180
220
250
270
290
300
330
350
390
430
470
540
560
680
750
820
850
1000
1200
1500
1800
2200
6
6.3
8
10
15
16
25
30
40
50
60
63
75
100
125
Characteristics & Capabilities:
TH range
Reverse voltage capability
The TH-series employs tantalum cathodes which allow
the continuous application of reverse potentials not
exceeding 3V over the whole temperature range.
Surge voltage
The surge voltage capability is 115% of the voltage
rating at the relevant temperature.
Temperature range
The capacitor is designed for operation between -55
°
C
and +125
°
C, with linear voltage derating above 85
°
C to
66% of the rated voltage at + 125
°
C.
Capacitance tolerance
The standard capacitance tolerance is ± 20% and ±10%
although special tolerances are available by arrangement.
4
4
5
7
10
10
16
20
25
30
40
40
50
65
85
Case Size
T1
T1
T1
T1
T1
T1
T1
T1
T1
T1
T1
T1
T1
T1
T1
T1
T1
T2
T1
T1
T1
T1
T1
T1
T1
T1
T1
T1
T1
T1
T1
T1
T1
T2
T1
T1/T2
T1 T1/T2
T2
T1
T1
T3
T2
T2
T2
T3
T3
T2
T2
T2
T2/T3
T2/T3
T2
T2/T3 T2/T3
T4
T4
T4
T3
T3
T3
T4
T4
T3
T3
T4
T4
T4
T4
T4
T4
T3
T4
T4
T3
T3
T4
T4
T4
T3
T2
T3
T2/T3 T2
T2
T3
T4
T4
T3/T4
T3/T4
T3
T3
T3
T3
T3
T3
T4
T4
T2
T2
T2/T3
T3
T2
T2
T2
T2/T3
T2
T4
T3
T3
T3
T4
T4
T3
T4
T2
T2
T2
T3
T3
T2
T2
T2
T4
T4
T3/T4
T3
T2
T2
T2
T3
T4
T3
T3
T3
T4
T4
T4
T4
T4
T1
T1
T3
T2
T2
T3
T2/T3 T3/T4
T4
T1
T2
T2
T3
T2
T2/T3 T3
T4
T2
T1
T2
T2
T2/T3
T2 T2/T3
T2/T3
T3
T2
T3
T2
T3
T1
T1
T1
T2
T2
T3
T2
T2
T2
T2
T1
T1
TH
Fig. 1. Case Sizes - Outline and Dimensions
T1
T1
T1
T1
T1
T1
T3
T3
Note: 1.2dia Anode Lead Stub must not be bent
Table 1 - Dimensions (mm)
Case
A
B
C
Size
max
max
max
1
16
13
30
2
21
18
30
3
24
21
30
4
31
28
30
Weight
D
max
5.6
7.8
10.2
10.2
E
±0.1
0.65
0.65
0.65
0.65
Case
Size
1
2
3
4
Approximate
Weight
2.5g
5.5g
10.5g
14.5g
SMTH
Fig. 2. Case Sizes - Outline and Dimensions
T3
T4
T4
T4
T4
T4
T4
T4
Surface mount foot material - 0.25mm Nickel
Table 2 - Dimensions (mm)
Case
Size
1
2
3
4
Weight
Case
Size
1
2
3
4
Approximate
Weight
2.5g
5.6g
11.6g
15.0g
A
max
17.8
22.6
25.8
33.3
B
min
14.0
18.4
22.4
29.2
max
15.0
19.4
23.4
30.2
C
±0.4
7.8
9.8
12.4
12.4
D
±0.1
6.25
8.30
10.8
10.8
E
±0.1
3.8
6.1
8.4
8.4
F
min
2.7
2.7
2.7
2.7
max
3.8
3.8
3.8
3.8
G
±0.1
1.8
1.8
1.8
1.8
H
±0.4
4.6
5.7
7.0
7.0
J
max
3.8
4.2
4.7
4.7
K
max
5.6
7.8
10.3
10.3
T4
T4
T4
T3
T4
T3
T4
3
Embedded System
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