Ordering number : ENN8064
15GN03N
15GN03N
Applications
•
NPN Epitaxial Planar Silicon Transistor
VHF High-frequency Amplifier Applications
VHF, RF, MIXER, OSC, IF amplifier.
Features
•
•
High cutoff frequency : fT=1.5GHz typ.
High gain
:
⏐S21e⏐
2
=11.5dB typ (f=0.4GHz).
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Conditions
Ratings
20
10
3
70
400
150
--55 to +150
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Reverse Transfer Capacitance
Forward Transfer Gain
Noise Figure
Symbol
ICBO
IEBO
hFE
fT
Cob
Cre
⏐
S21e
⏐
NF
2
Conditions
VCB=10V, IE=0
VEB=2V, IC=0
VCE=5V, IC=10mA
VCE=5V, IC=20mA
VCB=10V, f=1MHz
VCB=10V, f=1MHz
VCE=5V, IC=20mA, f=0.4GHz
VCE=3V, IC=2mA, f=0.4GHz
Ratings
min
typ
max
0.1
1
100
1.0
1.5
1.1
0.7
9
11.5
1.6
1.4
180
Unit
μA
μA
GHz
pF
pF
dB
dB
Marking : ZC
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
21505AB TS IM TB-00000414 No.8064-1/6
15GN03N
Package Dimensions
unit : mm
2004B
5.0
4.0
4.0
0.45
0.5
0.6
2.0
14.0
0.45
0.44
5.0
1 2 3
1 : Base
2 : Emitter
3 : Collector
1.3
1.3
SANYO : NP
100
90
IC -- VCE
0.8mA
0.7mA
0.6mA
0.5mA
0.4mA
0.3mA
80
70
IC -- VBE
VCE=5V
Collector Current, IC -- mA
Collector Current, IC -- mA
80
70
60
50
40
30
20
10
0
0
2
4
6
60
50
40
30
20
10
0.2mA
0.1mA
IB=0
8
10
IT08105
0
0
0.2
0.4
0.6
0.8
1.0
1.2
IT08106
Collector-to-Emitter Voltage, VCE -- V
3
hFE -- IC
Base-to-Emitter Voltage, VBE -- V
3
f T -- IC
VCE=5V
VCE=5V
Gain-Bandwidth Product, f T -- GHz
2
3
5
7
2
3
5
7
2
2
DC Current Gain, hFE
100
1.0
7
7
5
1.0
10
Collector Current, IC -- mA
100
IT08107
5
1.0
2
3
5
7
10
2
3
5
Collector Current, IC -- mA
7 100
IT08108
No.8064-2/6
15GN03N
3
Cob -- VCB
Reverse Transfer Capacitance, Cre -- pF
f=1MHz
3
Cre -- VCB
f=1MHz
Output Capacitance, Cob -- pF
2
2
1.0
1.0
7
7
5
0.1
2
3
5
7
1.0
2
3
5
7
10
5
0.1
2
3
5
7
1.0
2
3
5
7
10
14
Collector-to-Base Voltage, VCB -- V
⏐
S21e
⏐
2
-- I
IT08109
10
Collector-to-Base Voltage, VCB -- V
IT08110
C
NF -- IC
Forward Transfer Gain,
⏐
S21e
⏐
-- dB
VCE=5V
f=400MHz
7
12
VCE=3V
f=400MHz
2
Noise Figure, NF -- dB
5
10
3
50
Z S=
Ω
8
2
s
=Z
ZS
op
t
6
4
1.0
1.0
2
3
5
7
10
2
3
5
Collector Current, IC -- mA
450
400
100
IT08111
7
3
5
7
1.0
2
3
5
7
10
2
3
5
PC -- Ta
Collector Current, IC -- mA
IT08112
Collector Dissipation, PC -- mW
350
300
250
200
150
100
50
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta --
°C
IT08113
No.8064-3/6
MCU
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EEWORLD
