28C256TRT1FS-12 datasheet, PDF

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28C256TRT1FS-12: Description32K X 8 EEPROM 5V, 120 ns, DIP28; Categorystorage; File Size195KB，14 Pages; ManufacturerMaxell; Websitehttp://www.maxell.com

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28C256TRT1FS-12 Overview

32K X 8 EEPROM 5V, 120 ns, DIP28

28C256TRT1FS-12 Parametric

Parameter Name	Attribute value
Number of functions	1
Number of terminals	28
Minimum operating temperature	-55 Cel
Maximum operating temperature	125 Cel
Rated supply voltage	5 V
Minimum supply/operating voltage	4.5 V
Maximum supply/operating voltage	5.5 V
Processing package description	DIP-28
state	Active
ccess_time_max	120 ns
jesd_30_code	R-XDIP-T28
storage density	262144 bi
Memory IC type	EEPROM
memory width	8
Number of digits	32768 words
Number of digits	32K
operating mode	ASYNCHRONOUS
organize	32KX8
Packaging Materials	UNSPECIFIED
ckage_code	DIP
packaging shape	RECTANGULAR
Package Size	IN-LINE
serial parallel	PARALLEL
gramming_voltage__v_	5
qualification_status	COMMERCIAL
seated_height_max	5.72 mm
surface mount	NO
Temperature level	MILITARY
Terminal form	THROUGH-HOLE
Terminal spacing	2.54 mm
Terminal location	DUAL
l_dose	25k Rad(Si)
Maximum TWC of write cycle	10 ms
length	35.56 mm
width	15.24 mm

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28C256T

256K EEPROM (32K x 8-Bit)

EEPROM

GND

DATA INPUTS/OUTPUTS

I/O0 - I/O7

OE, CE, and WE

LOGIC

DATA LATCH

INPUT/OUTPUT

BUFFERS

Y-GATING

CELL MATRIX

Y DECODER

ADDRESS

INPUTS

X DECODER

IDENTIFICATION

Logic Diagram

Memory

EATURES

• R

-P

® radiation-hardened against natural space radia-

tion

• Total dose hardness:

- > 100 Krad (Si), dependent upon space mission

• Excellent Single Event Effects:

- SEL

LET: > 120 MeV/mg/cm

- SEU

LET (read mode): > 90 MeV/mg/cm

- SEU

LET (write mode): > 18 MeV/mg/cm

• Package:

- 28 pin R

-P

® flat pack

- 28 pin R

-P

® DIP

- JEDEC approved byte wide pinout

• High Speed:

- 120, 150 ns maximum access times available

• High endurance:

- 10,000 erase/write (in Page Mode), 10-year data

retention

• Page Write Mode:

- 1 to 64 bytes

• Low power dissipation:

- 15 mA active current (cycle = 1 µ s)

- 20 µ A standby current (CE = V

)

ESCRIPTION

Maxwell Technologies’ 28C256T high density 256k-bit

EEPROM microcircuit features a greater than 100 krad (Si)

total dose tolerance, depending upon space mission. The

28C256T is capable of in-system electrical byte and page pro-

grammability. It has a 64-Byte page programming function to

make its erase and write operations faster. It also features

data polling to indicate the completion of erase and program-

ming operations.

Maxwell Technologies' patented R

-P

® packaging technol-

ogy incorporates radiation shielding in the microcircuit pack-

age. It eliminates the need for box shielding while providing

the required radiation shielding for a lifetime in orbit or space

mission. In a GEO orbit, R

-P

provides greater than 100

krad (Si) radiation dose tolerance. This product is available

with screening up to Class S.

02.18.02 Rev 5

All data sheets are subject to change without notice

(858) 503-3300 - Fax: (858) 503-3301- www.maxwell.com

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