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28C256TRT4DB-12

Description
32K X 8 EEPROM 5V, 120 ns, DIP28
Categorystorage   
File Size195KB,14 Pages
ManufacturerMaxell
Websitehttp://www.maxell.com
Download Datasheet Parametric View All

28C256TRT4DB-12 Overview

32K X 8 EEPROM 5V, 120 ns, DIP28

28C256TRT4DB-12 Parametric

Parameter NameAttribute value
Number of functions1
Number of terminals28
Minimum operating temperature-55 Cel
Maximum operating temperature125 Cel
Rated supply voltage5 V
Minimum supply/operating voltage4.5 V
Maximum supply/operating voltage5.5 V
Processing package descriptionDIP-28
stateActive
ccess_time_max120 ns
jesd_30_codeR-XDIP-T28
storage density262144 bi
Memory IC typeEEPROM
memory width8
Number of digits32768 words
Number of digits32K
operating modeASYNCHRONOUS
organize32KX8
Packaging MaterialsUNSPECIFIED
ckage_codeDIP
packaging shapeRECTANGULAR
Package SizeIN-LINE
serial parallelPARALLEL
gramming_voltage__v_5
qualification_statusCOMMERCIAL
seated_height_max5.72 mm
surface mountNO
Temperature levelMILITARY
Terminal formTHROUGH-HOLE
Terminal spacing2.54 mm
Terminal locationDUAL
l_dose25k Rad(Si)
Maximum TWC of write cycle10 ms
length35.56 mm
width15.24 mm
28C256T
256K EEPROM (32K x 8-Bit)
EEPROM
V
CC
GND
DATA INPUTS/OUTPUTS
I/O0 - I/O7
OE
WE
CE
OE, CE, and WE
LOGIC
DATA LATCH
INPUT/OUTPUT
BUFFERS
Y-GATING
CELL MATRIX
Y DECODER
ADDRESS
INPUTS
X DECODER
IDENTIFICATION
Logic Diagram
Memory
F
EATURES
:
• R
AD
-P
AK
® radiation-hardened against natural space radia-
tion
• Total dose hardness:
- > 100 Krad (Si), dependent upon space mission
• Excellent Single Event Effects:
- SEL
TH
LET: > 120 MeV/mg/cm
2
- SEU
TH
LET (read mode): > 90 MeV/mg/cm
2
- SEU
TH
LET (write mode): > 18 MeV/mg/cm
2
• Package:
- 28 pin R
AD
-P
AK
® flat pack
- 28 pin R
AD
-P
AK
® DIP
- JEDEC approved byte wide pinout
• High Speed:
- 120, 150 ns maximum access times available
• High endurance:
- 10,000 erase/write (in Page Mode), 10-year data
retention
• Page Write Mode:
- 1 to 64 bytes
• Low power dissipation:
- 15 mA active current (cycle = 1 µ s)
- 20 µ A standby current (CE = V
CC
)
D
ESCRIPTION
:
Maxwell Technologies’ 28C256T high density 256k-bit
EEPROM microcircuit features a greater than 100 krad (Si)
total dose tolerance, depending upon space mission. The
28C256T is capable of in-system electrical byte and page pro-
grammability. It has a 64-Byte page programming function to
make its erase and write operations faster. It also features
data polling to indicate the completion of erase and program-
ming operations.
Maxwell Technologies' patented R
AD
-P
AK
® packaging technol-
ogy incorporates radiation shielding in the microcircuit pack-
age. It eliminates the need for box shielding while providing
the required radiation shielding for a lifetime in orbit or space
mission. In a GEO orbit, R
AD
-P
AK
provides greater than 100
krad (Si) radiation dose tolerance. This product is available
with screening up to Class S.
02.18.02 Rev 5
All data sheets are subject to change without notice
1
(858) 503-3300 - Fax: (858) 503-3301- www.maxwell.com
©2001 Maxwell Technologies
All rights reserved.
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