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2CK48B

Description
SILICON EPITAXIAL PLANAR SWITCHING DIODE
File Size13KB,1 Pages
ManufacturerSSE
Websitehttp://www.sse-diode.com/
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2CK48B Overview

SILICON EPITAXIAL PLANAR SWITCHING DIODE

SHANGHAI SUNRISE ELECTRONICS CO., LTD.
2CK48, 2CK48A, 2CK48B
SILICON EPITAXIAL PLANAR
SWITCHING DIODE
REVERSE VOLTAGE: 35-60-90V
FORWARD CURRENT: 150mA
FEATURES
• Small glass structure ensures high reliability
• Fast switching
• Low leakage
• High temperature soldering guaranteed:
250
o
C/10S/9.5mm lead length
at 5 lbs tension
TECHNICAL
SPECIFICATION
DO - 35
1.0 (25.4)
MIN.
.120 (3.0)
.200 (5.1)
.060 (1.5)
.090 (2.3) DIA.
MECHANICAL DATA
• Terminal: Plated axial leads solderable per
MIL-STD 202E, method 208C
• Case: Glass,hermetically sealed
• Polarity: Color band denotes cathode
• Mounting position: Any
1.0 (25.4)
MIN.
.018 (0.46)
.022 (0.56) DIA.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND CHARACTERISTICS
(Ratings at 25
o
C ambient temperature unless otherwise specified)
RATINGS
Reverse Voltage
Peak Reverse Voltage
Forward Current (average)
Repetitive Forward Peak Current
Forward Voltage (I
F
=10mA)
Reverse Current (V=V
R
)
SYMBOL
V
R
V
RM
I
O
I
FRM
V
F
I
R1
I
R2
2CK48
35
40
2CK48A 2CK48B
60
70
150
450
1
1
20
3
90
100
UNITS
V
V
mA
mA
V
µA
µA
pF
nS
o
Reverse Current (V=V
R
,T
J
=100
o
C)
Capacitance
(Note 1)
Ct
4
Reverse Recovery Time
(Note 2)
trr
5
Thermal Resistance
R
θ
(ja)
0.35
(junction to ambient)
(Note 3)
T
STG,
T
J
-55 +175
Operating Junction and Storage Temperature Range
Note
1. V
R
=1V, f=1 MHz
2. I
F
=10mA to I
R
=10mA, Irr=1mA
3: Valid provided that leads are kept at ambient temperature at a distance of 8mm from case.
C/mW
o
C
http://www.sse-diode.com

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2CK48B 2CK48
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