DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP86N04EHE, NP86N04KHE
NP86N04CHE, NP86N04DHE, NP86N04MHE, NP86N04NHE
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
These products are N-channel MOS Field Effect Transistors designed for high current switching applications.
<R>
ORDERING INFORMATION
PART NUMBER
NP86N04EHE-E1-AY
NP86N04EHE-E2-AY
NP86N04KHE-E1-AY
NP86N04KHE-E2-AY
Note1, 2
Note1, 2
Note1
Note1
Note1, 2
Note1, 2
Note1
Note1
LEAD PLATING
PACKING
PACKAGE
TO-263 (MP-25ZJ) typ. 1.4 g
Pure Sn (Tin)
Tape 800 p/reel
TO-263 (MP-25ZK) typ. 1.5 g
NP86N04CHE-S12-AZ
NP86N04DHE-S12-AY
NP86N04MHE-S18-AY
NP86N04NHE-S18-AY
Sn-Ag-Cu
Tube 50 p/tube
TO-220 (MP-25) typ. 1.9 g
TO-262 (MP-25 Fin Cut) typ. 1.8 g
TO-220 (MP-25K) typ. 1.9 g
TO-262 (MP-25SK) typ. 1.8 g
Pure Sn (Tin)
Notes 1.
Pb-free (This product does not contain Pb in the external electrode.)
2.
Not for new design
(TO-220)
FEATURES
•
Channel temperature 175 degree rated
•
Super low on-state resistance
R
DS(on)
= 4.4 mΩ MAX. (V
GS
= 10 V, I
D
= 43 A)
•
Low input capacitance
C
iss
= 5900 pF TYP.
•
Built-in gate protection diode
(TO-262)
(TO-263)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D14235EJ4V0DS00 (4th edition)
Date Published October 2007 NS
Printed in Japan
1999, 2000, 2007
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
NP86N04EHE, NP86N04KHE, NP86N04CHE, NP86N04DHE, NP86N04MHE, NP86N04NHE
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (Pulse)
Note2
Note1
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
P
T
T
ch
T
stg
40
±20
±86
±344
230
1.8
175
−55
to
+175
86/67/24
74/450/580
V
V
A
A
W
W
°C
°C
A
mJ
Total Power Dissipation (T
C
= 25°C)
Total Power Dissipation (T
A
= 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Note3
Note3
I
AS
E
AS
Notes 1.
Calculated constant current according to MAX. allowable channel temperature.
2.
PW
≤
10
μ
s, Duty cycle
≤
1%
3.
Starting T
ch
= 25°C, V
DD
= 20 V, R
G
= 25
Ω,
V
GS
= 20
→
0 V (see
Figure 4.)
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
R
th(ch-C)
R
th(ch-A)
0.65
83.3
°C/W
°C/W
2
Data Sheet D14235EJ4V0DS
NP86N04EHE, NP86N04KHE, NP86N04CHE, NP86N04DHE, NP86N04MHE, NP86N04NHE
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate to Source Threshold Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
SYMBOL
I
DSS
I
GSS
V
GS(th)
| y
fs
|
R
DS(on)
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
t
rr
Q
rr
V
DD
= 32 V,
V
GS
= 10 V,
I
D
= 86 A
I
F
= 86 A, V
GS
= 0 V
I
F
= 86 A, V
GS
= 0 V,
di/dt = 100 A/
μ
s
TEST CONDITIONS
V
DS
= 40 V, V
GS
= 0 V
V
GS
=
±20
V, V
DS
= 0 V
V
DS
= V
GS
, I
D
= 250
μ
A
V
DS
= 10 V, I
D
= 43 A
V
GS
= 10 V, I
D
= 43 A
V
DS
= 25 V,
V
GS
= 0 V,
f = 1 MHz
V
DD
= 20 V, I
D
= 43 A,
V
GS
= 10 V,
R
G
= 1
Ω
2.0
29
3.0
57
3.5
5900
1200
530
32
24
110
33
110
22
36
0.93
70
125
4.4
8900
1800
960
71
59
220
82
170
MIN.
TYP.
MAX.
10
±10
4.0
UNIT
μ
A
μ
A
V
S
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
R
G
= 25
Ω
PG.
V
GS
= 20
→
0 V
50
Ω
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L
V
DD
PG.
R
G
V
GS
R
L
V
DD
V
DS
90%
90%
10%
10%
V
GS
Wave Form
0
10%
V
GS
90%
BV
DSS
I
AS
I
D
V
DD
V
DS
V
GS
0
τ
τ
= 1
μs
Duty Cycle
≤
1%
V
DS
V
DS
Wave Form
0
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
Starting T
ch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
I
G
= 2 mA
PG.
50
Ω
R
L
V
DD
Data Sheet D14235EJ4V0DS
3
NP86N04EHE, NP86N04KHE, NP86N04CHE, NP86N04DHE, NP86N04MHE, NP86N04NHE
TYPICAL CHARACTERISTICS (T
A
= 25°C)
Figure1. DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
dT - Percentage of Rated Power -
%
Figure2. TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
280
P
T
- Total Power Dissipation - W
100
80
60
40
20
0
240
200
160
120
80
40
0
0
25
50
75
100 125 150 175 200
0
25
50
75
100 125 150 175 200
T
C
- Case Temperature -
°C
T
C
- Case Temperature -
°C
Figure3. FORWARD BIAS SAFE OPERATING AREA
1000
d
ite
im V)
)
L 0
on
S(
=1
R
D
V
GS
(
Figure4. SINGLE AVALANCHE ENERGY
DERATING FACTOR
800
I
D(pulse)
I
D(DC)
Po
Lim wer
ite Dis
d
sip
a
1m
10
s
=1
E
AS
- Single Avalanche Energy - mJ
PW
0
μ
s
0
μ
700
600
500
400
300
200
100
74 mJ
0
25
50
75
100
125
150
175
580 mJ
450 mJ
I
AS
= 24 A
67 A
84 A
s
I
D
- Drain Current - A
100
DC
10
tio
n
1
T
C
= 25°C
Single Pulse
0.1
0.1
1
10
100
V
DS
- Drain to Source Voltage - V
Starting T
ch
- Starting Channel Temperature -
°C
Figure5. TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
r
th(t)
- Transient Thermal Resistance -
°C/W
100
R
th(ch-A)
= 83.3°C/W
10
1
R
th(ch-C)
= 0.65°C/W
0.1
Single Pulse
T
C
= 25°C
0.01
10
μ
100
μ
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
4
Data Sheet D14235EJ4V0DS
NP86N04EHE, NP86N04KHE, NP86N04CHE, NP86N04DHE, NP86N04MHE, NP86N04NHE
Figure6. FORWARD TRANSFER CHARACTERISTICS
1000
Pulsed
400
320
Figure7. DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
Pulsed
I
D
- Drain Current - A
100
T
A
=
−55°C
25°C
75°C
150°C
175°C
I
D
- Drain Current - A
V
GS
= 10 V
240
10
160
1
80
0.1
1
2
3
4
5
6
V
GS
- Gate to Source Voltage - V
0
0
0.4
0.8
1.2
1.6
2
V
DS
- Drain to Source Voltage - V
10
T
A
= 175°C
75°C
25°C
−55°C
1
R
DS(on)
- Drain to Source On-state Resistance - mΩ
| y
fs
| - Forward Transfer Admittance - S
Figure8. FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
V
DS
= 10 V
Pulsed
Figure9. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
20
Pulsed
10
0.1
I
D
= 43 A
0.01
0.01
0.1
1
10
100
0
0
5
10
15
20
I
D
- Drain Current - A
V
GS
- Gate to Source Voltage - V
R
DS(on)
- Drain to Source On-state Resistance - mΩ
V
GS(th)
- Gate to Source Threshold Voltage - V
Figure10. DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
15
Pulsed
Figure11. GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
4.0
V
DS
= V
GS
I
D
= 250
μA
3.0
10
2.0
5
V
GS
= 10 V
1.0
0
0
1
10
100
1000
−50
0
50
100
150
I
D
- Drain Current - A
T
ch
- Channel Temperature -
°C
Data Sheet D14235EJ4V0DS
5
Analogue and Mixed Signal
京公网安备 11010802033920号
EEWORLD
