DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP82N055EHE, NP82N055KHE
NP82N055CHE, NP82N055DHE, NP82N055MHE, NP82N055NHE
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
These products are N-channel MOS Field Effect Transistors designed for high current switching applications.
<R>
ORDERING INFORMATION
PART NUMBER
NP82N055EHE-E1-AY
NP82N055EHE-E2-AY
NP82N055KHE-E1-AY
NP82N055KHE-E2-AY
Note1, 2
Note1, 2
Note1
Note1
Note1, 2
Note1, 2
Note1
Note1
LEAD PLATING
PACKING
PACKAGE
TO-263 (MP-25ZJ) typ. 1.4 g
Pure Sn (Tin)
Tape 800 p/reel
TO-263 (MP-25ZK) typ. 1.5 g
NP82N055CHE-S12-AZ
NP82N055DHE-S12-AY
NP82N055MHE-S18-AY
NP82N055NHE-S18-AY
Sn-Ag-Cu
Tube 50 p/tube
TO-220 (MP-25) typ. 1.9 g
TO-262 (MP-25 Fin Cut) typ. 1.8 g
TO-220 (MP-25K) typ. 1.9 g
TO-262 (MP-25SK) typ. 1.8 g
Pure Sn (Tin)
Notes 1.
Pb-free (This product does not contain Pb in the external electrode.)
2.
Not for new design
(TO-220)
FEATURES
•
Channel temperature 175 degree rated
•
Super low on-state resistance
R
DS(on)
= 8.6 mΩ MAX. (V
GS
= 10 V, I
D
= 41 A)
•
Low input capacitance
C
iss
= 3500 pF TYP.
•
Built-in gate protection diode
(TO-262)
(TO-263)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D14138EJ6V0DS00 (6th edition)
Date Published October 2007 NS
Printed in Japan
1999, 2007
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
NP82N055EHE, NP82N055KHE, NP82N055CHE, NP82N055DHE, NP82N055MHE, NP82N055NHE
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note2
Note1
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
P
T
T
ch
T
stg
55
±20
±82
±300
1.8
163
175
−55
to
+175
72/49/17
51/240/289
V
V
A
A
W
W
°C
°C
A
mJ
Total Power Dissipation (T
A
= 25°C)
Total Power Dissipation (T
C
= 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Note3
Note3
I
AS
E
AS
Notes 1.
Calculated constant current according to MAX. allowable channel temperature.
2.
PW
≤
10
μ
s, Duty cycle
≤
1%
3.
Starting T
ch
= 25°C, V
DD
= 28 V, R
G
= 25
Ω,
V
GS
= 20
→
0 V (See
Figure 4.)
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
R
th(ch-C)
R
th(ch-A)
0.92
83.3
°C/W
°C/W
2
Data Sheet D14138EJ6V0DS
NP82N055EHE, NP82N055KHE, NP82N055CHE, NP82N055DHE, NP82N055MHE, NP82N055NHE
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate to Source Threshold Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
SYMBOL
I
DSS
I
GSS
V
GS(th)
| y
fs
|
R
DS(on)
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
t
rr
Q
rr
V
DD
= 44 V,
V
GS
= 10 V,
I
D
= 82 A
I
F
= 82 A, V
GS
= 0 V
I
F
= 82 A, V
GS
= 0 V,
di/dt = 100 A/
μ
s
TEST CONDITIONS
V
DS
= 55 V, V
GS
= 0 V
V
GS
=
±20
V, V
DS
= 0 V
V
DS
= V
GS
, I
D
= 250
μ
A
V
DS
= 10 V, I
D
= 41 A
V
GS
= 10 V, I
D
= 41 A
V
DS
= 25 V,
V
GS
= 0 V,
f = 1 MHz
V
DD
= 28 V, I
D
= 41 A,
V
GS
= 10 V,
R
G
= 1
Ω
2.0
19
3.0
38
6.9
3500
550
270
31
18
61
19
65
18
24
1.0
45
63
8.6
5250
830
490
69
45
120
47
100
MIN.
TYP.
MAX.
10
±10
4.0
UNIT
μ
A
μ
A
V
S
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
R
G
= 25
Ω
PG.
V
GS
= 20
→
0 V
50
Ω
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L
V
DD
PG.
R
G
V
GS
R
L
V
DD
V
DS
90%
90%
10%
10%
V
GS
Wave Form
0
10%
V
GS
90%
BV
DSS
I
AS
I
D
V
DD
V
DS
V
GS
0
τ
V
DS
V
DS
Wave Form
0
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
Starting T
ch
τ
= 1
μ
s
Duty Cycle
≤
1%
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
I
G
= 2 mA
PG.
50
Ω
R
L
V
DD
Data Sheet D14138EJ6V0DS
3
NP82N055EHE, NP82N055KHE, NP82N055CHE, NP82N055DHE, NP82N055MHE, NP82N055NHE
TYPICAL CHARACTERISTICS (T
A
= 25°C)
Figure1. DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
175
Figure2. TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
dT - Percentage of Rated Power - %
P
T
- Total Power Dissipation - W
25
50
75
100 125 150 175 200
100
80
60
40
20
0
150
125
100
75
50
25
0
0
25
50
75
100 125 150 175 200
0
T
C
- Case Temperature -
°C
Figure.3 FORWARD BIAS SAFE OPERATING AREA
1000
I
D(pulse)
PW
T
C
- Case Temperature -
°C
Figure4. SINGLE AVALANCHE ENERGY
DERATING FACTOR
I
D
- Drain Current - A
100
d
ite
im V )
)
L 0
on
1
S(
R
D
GS
=
(V
=1
Single Pulse Avalanche Energy - mJ
350
300
289 mJ
240 mJ
I
D(DC)
DC
Po
Lim wer
ite Dis
d
sip
ati
on
1m
10
s
0
μ
s
0
μ
s
250
200
150
100
51 mJ
10
I
AS
= 17 A
49 A
72 A
1
T
C
= 25°C
0.1 Single Pulse
0.1
50
0
25
50
75
100
125
150
175
1
10
100
V
DS
- Drain to Source Voltage - V
Starting T
ch
- Starting Channel Temperature -
°C
Figure5. TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
r
th(t)
- Transient Thermal Resistance -
°C/W
100
R
th(ch-A)
= 83.3°C/W
10
1
R
th(ch-C)
= 0.92°C/W
0.1
Single Pulse
0.01
10
μ
100
μ
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
4
Data Sheet D14138EJ6V0DS
NP82N055EHE, NP82N055KHE, NP82N055CHE, NP82N055DHE, NP82N055MHE, NP82N055NHE
Figure6. FORWARD TRANSFER CHARACTERISTICS
1000
Pulsed
T
A
=
−55°C
25°C
75°C
150°C
175°C
300
250
I
D
- Drain Current - A
I
D
- Drain Current - A
Figure7. DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
GS
=10 V
100
200
150
100
50
10
1
0.1
2
3
4
5
V
DS
= 10 V
6
7
0
0
1
2
3
4
Pulsed
5
6
V
GS
- Gate to Source Voltage - V
V
DS
- Drain to Source Voltage - V
10
T
A
= 175°C
75°C
25°C
−50°C
R
DS(on)
- Drain to Source On-state Resistance - mΩ
| y
fs
| - Forward Transfer Admittance - S
Figure8. FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
V
DS
= 10 V
Pulsed
Figure9. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
20
Pulsed
1
10
I
D
= 41 A
0.1
0.01
0.01
0.1
1
10
100
0
0
5
10
15
20
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-state Resistance - mΩ
V
GS
- Gate to Source Voltage - V
Figure11. GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
4.0
V
DS
= V
GS
I
D
= 250
μA
3.0
20
Pulsed
V
GS(th)
- Gate to Source Threshold Voltage - V
Figure10. DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
10
V
GS
= 10 V
2.0
1.0
0
0
1
10
100
1000
−50
0
50
100
150
I
D
- Drain Current - A
T
ch
- Channel Temperature -
°C
Data Sheet D14138EJ6V0DS
5
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