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BAS17212

Description
DIODE SILICON, STABISTOR DIODE, Stabistor Diode
CategoryDiscrete semiconductor    diode   
File Size58KB,3 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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BAS17212 Overview

DIODE SILICON, STABISTOR DIODE, Stabistor Diode

BAS17212 Parametric

Parameter NameAttribute value
package instructionR-PDSO-G3
Reach Compliance Codeunknown
ECCN codeEAR99
Is SamacsysN
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeSTABISTOR DIODE
Maximum forward voltage (VF)0.96 V
Minimum forward voltage (VF)0.87 V
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Maximum power dissipation0.25 W
Certification statusNot Qualified
Reverse test voltage4 V
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Base Number Matches1

BAS17212 Related Products

BAS17212 BAS17235
Description DIODE SILICON, STABISTOR DIODE, Stabistor Diode DIODE SILICON, STABISTOR DIODE, Stabistor Diode
package instruction R-PDSO-G3 R-PDSO-G3
Reach Compliance Code unknown unknown
ECCN code EAR99 EAR99
Configuration SINGLE SINGLE
Diode component materials SILICON SILICON
Diode type STABISTOR DIODE STABISTOR DIODE
Maximum forward voltage (VF) 0.96 V 0.96 V
Minimum forward voltage (VF) 0.87 V 0.87 V
JESD-30 code R-PDSO-G3 R-PDSO-G3
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Maximum power dissipation 0.25 W 0.25 W
Certification status Not Qualified Not Qualified
Reverse test voltage 4 V 4 V
surface mount YES YES
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
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