PRELIMINARY DATA SHEET
C TO X BAND AMPLIFIER
C TO X BAND OSC
N-CHANNEL GaAs MESFET
FEATURES
•
•
•
•
•
HIGH POWER GAIN:
Gs = 5.5 dB TYP at f = 12 GHz
GATE LENGTH:
Lg = 0.8
µm
(recessed gate)
GATE WIDTH:
Wg = 330
µm
4 PINS SUPER MINI MOLD
0.3
-0.05
NE72118
PACKAGE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE 18
2.1
±
0.2
1.25
±
0.1
2
3
2.0
±
0.2
(1.25)
0.4
-0.05
0.9
±
0.1
The NE72118 is a high performance gallium arsenide metal
semiconductor field effect transistor (MESFET), housed in a
low cost plastic surface mount package (SOT 23 style). This
device's low phase noise and high f
T
make it an excellent
choice for oscillator applications on a digital LNB (Low Noise
Block).
NEC's stringent quality assurance and test procedures ensure
the highest reliability performance.
0.3
PIN CONNECTIONS
1. Source
2. Gate
3. Source
4. Drain
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
I
GSO
I
DSS
V
GS (OFF)
g
m
PN
Gs
Po
(1dB)
PARAMETERS AND CONDITIONS
Gate to Source Leak Current at V
GS
= -5 V
Saturated Drain Current at V
DS
= 3 V, V
GS
= 0 V
Gate to Source Cut off Voltage at V
DS
= 3 V, I
D
= 100
µA
Transconductance at V
DS
= 3 V, I
D
= 30 mA
UNITS
µA
µA
V
mS
30
-0.5
20
MIN
NE72118
18
TYP
1.0
60
-2.0
40
-110
-85
5.5
13.5
MAX
10
100
-4.0
Phase Noise at V
DS
=3 V, I
D
=30mA, f=11GHz,100KHz offset dBc/Hz
Phase Noise at V
DS
=3 V, I
D
=30mA, f=11GHz, 10KHz offset dBc/Hz
Power Gain at V
DS
= 3 V, I
D
= 30 mA, f = 12 GHz
Output Power at 1 dB Gain Compression Point at
V
CE
= 3 V, I
D
= 30 mA, f = 12 GHz
dB
dBm
California Eastern Laboratories
0 to 0.1
0.15
-0.05
+0.1
0.3
-0.05
+0.1
1
4
+0.1
DESCRIPTION
0.60
(1.3) 0.3
-0.05
0.65
+0.1
+0.1
TAPE & REEL PACKAGING
V53
NE72118
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25°C)
SYMBOLS
V
DS
V
GS
V
GD
I
D
P
TOT
T
CH
T
STG
PARAMETERS
Drain to Source Voltage
Gate to Source Voltage
Gate to Drain Voltage
Drain Current
Total Power Dissipation
Channel Temperature
Storage Temperature
UNITS
V
V
V
mA
mW
°C
°C
RATINGS
5.0
-6.0
-6.0
IDSS
250
125
-65 to +125
ORDERING INFORMATION
PART NUMBER
NE72118-T1
NE72118-T2
QUANTITY
3K/Reel
3K/Reel
Notes:
1. Operation in excess of any one of these parameters may result
in permanent damage.
TYPICAL PERFORMANCE CURVES
(T
A
= 25°C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
500
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
Total Power Dissipation, P
TOT
(mW)
100
Drain Current, I
D
(mA)
400
80
V
GS
= 0 V
300
60
200
40
V
GS
= -0.5 V
20
V
GS
= -1.0 V
100
0
50
100
150
200
250
0
1
2
3
4
5
Ambient Temperature, T
A
(°C)
Drain to Source Voltage, V
DS
(V)
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
80
V
DS
= 3 V
Drain Current, I
D
(mA)
60
40
20
0
-4.0
-2.0
0
Gate to Source Volatge, V
GS
(V)
NE72118
TYPICAL SCATTERING PARAMETERS
(T
A
= 25°C)
V
DS
= 3 V, ID = 30 mA
FREQUENCY
(MHz)
2000
3000
4000
5000
6000
7000
8000
9000
10000
11000
12000
13000
14000
15000
16000
17000
18000
MAG
0.900
0.826
0.734
0.657
0.609
0.577
0.558
0.581
0.659
0.739
0.794
0.840
0.888
0.923
0.944
0.941
0.922
S
11
ANG
-50.1
-71.2
-94.9
-121.9
-146.2
-169.5
166.5
142.6
123.3
105.9
89.9
77.8
65.3
51.2
43.3
39.4
30.8
MAG
2.906
2.733
2.611
2.466
2.286
2.084
1.899
1.789
1.688
1.522
1.324
1.150
0.983
0.781
0.596
0.465
0.374
S
21
ANG
132.3
114.0
95.2
75.7
57.4
39.8
23.7
7.8
-10.0
-28.8
-46.2
-62.6
-80.4
-97.6
-110.4
-119.0
-125.9
MAG
0.058
0.074
0.086
0.088
0.089
0.089
0.091
0.104
0.130
0.152
0.164
0.177
0.183
0.175
0.157
0.147
0.136
S
12
ANG
58.4
49.0
39.8
32.6
28.1
27.6
30.1
31.9
27.7
18.4
8.5
-2.9
-16.4
-29.8
-39.7
-47.1
-54.5
MAG
0.640
0.596
0.563
0.524
0.468
0.407
0.354
0.323
0.285
0.238
0.260
0.359
0.469
0.549
0.621
0.712
0.787
S
22
ANG
-27.1
-38.2
-47.6
-55.7
-63.2
-74.0
-85.7
-101.4
-127.2
-167.1
145.9
112.2
89.2
71.6
56.4
45.5
40.0
0.44
0.59
0.76
0.96
1.19
1.44
1.66
1.50
1.12
0.93
0.89
0.80
0.68
0.62
0.60
0.67
0.82
K
MAG
1
(dB)
18.76
15.62
13.35
11.69
11.46
9.76
8.46
8.17
9.05
7.33
7.06
7.14
7.67
7.68
7.28
5.80
3.89
V
DS
= 3 V, ID = 40 mA
FREQUENCY
(MHz)
2000
3000
4000
5000
6000
7000
8000
9000
10000
11000
12000
13000
14000
15000
16000
17000
18000
MAG
0.894
0.817
0.725
0.647
0.600
0.569
0.550
0.571
0.653
0.737
0.799
0.846
0.895
0.931
0.956
0.949
0.932
S
11
ANG
-50.6
-72.0
-95.7
-122.6
-146.6
-170.0
166.1
142.5
123.9
106.6
90.5
78.3
65.9
51.6
43.6
39.4
30.6
MAG
3.050
2.858
2.716
2.556
2.368
2.156
1.968
1.855
1.760
1.602
1.398
1.215
1.045
0.827
0.630
0.487
0.386
S
21
ANG
132.1
113.7
95.0
75.8
57.7
40.2
24.2
8.7
-9.0
-27.9
-45.5
-62.3
-80.3
-98.1
-111.4
-120.5
-127.2
MAG
0.053
0.068
0.078
0.080
0.079
0.082
0.086
0.104
0.134
0.159
0.176
0.188
0.195
0.186
0.169
0.158
0.144
S
12
ANG
59.6
49.2
41.5
33.7
34.1
34.0
37.9
40.5
35.6
24.5
13.2
1.8
-12.7
-26.9
-38.4
-47.0
-53.2
MAG
0.660
0.615
0.582
0.546
0.495
0.440
0.394
0.366
0.329
0.279
0.282
0.368
0.477
0.562
0.635
0.724
0.792
S
22
ANG
-26.6
-37.0
-46.0
-53.7
-61.2
-71.7
-82.9
-97.4
-121.7
-158.0
157.2
120.6
95.3
75.6
59.3
47.5
41.7
0.44
0.61
0.79
1.00
1.24
1.45
1.63
1.41
1.00
0.82
0.76
0.71
0.59
0.53
0.48
0.53
0.69
K
MAG
1
(dB)
19.16
15.97
13.72
14.83
11.83
10.21
8.96
8.73
10.81
7.85
7.69
7.79
8.52
8.73
8.84
6.97
4.84
Note:
1. Gain Calculation:
MAG =
|S
21
|
|S
12
|
(
K
±
K
2
- 1
).
When K
≤
1, MAG is undefined and MSG values are used. MSG =
2
2
2
|S
21
|
, K = 1 + |
∆
| - |S
11
| - |S
22
|
,
∆
= S
11
S
22
- S
21
S
12
|S
12
|
2 |S
12
S
21
|
EXCLUSIVE NORTH AMERICAN AGENT FOR
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES
• Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279
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