2N1595 thru 2N1599
SILICON THYRISTOR
Industrial-type, low-current silicon controlled rectifiers
in a three-lead package ideal for printed-circuit applications.
Current handling capability of 1.6 amperes at junction temperetures to 125°C
MAXIMUM RATINGS (*)
T
J
=125°C unless otherwise noted
Symbol
V
RSM(REP)
I
T(RMS)
I
TSM
P
GM
P
G(AV)
I
GM
V
GFM
V
GRM
T
J
T
STG
Ratings
Peak reverse blocking voltage *
Forward Current RMS (all conduction
angles)
Peak Surge Current
(One Cycle, 60Hz, T
J
=-65 to +125°C)
Peak Gate Power – Forward
Average Gate Power - Forward
Peak Gate Current – Forward
Peak Gate Voltage - Forward
Peak Gate Voltage - Reverse
Operating
Range
Junction
Temperature
2N1595
2N1596
2N1597
2N1598
2N1599
50
100
200
1.6
15
0.1
0.01
0.1
300
400
V
Amp
Amp
W
W
Amp
10
10
-65 to +125
V
V
°C
Storage Temperature Range
-65 to +150
ELECTRICAL CHARACTERISTICS
T
J
=25°C unless otherwise noted, R
GK
=1000Ω
Symbol
V
DRM
I
RRM
Ratings
Peak Forward Blocking
Min :
Voltage *
Peak Reverse Blocking Current
(Rated
V
DRM
,
T
J
=125°C)
2N1595
2N1596 2N1597 2N1598
2N1599
50
100
200
Max : 1.0
300
400
V
mA
COMSET SEMICONDUCTORS
1/2
2N1595 thru 2N1599
Symbol
I
DRM
I
GT
Ratings
Peak Forward Blocking Current
(Rated
V
DRM
with gate open
,
T
J
=125°C)
Gate Trigger Current (2)
Anode Voltage=7.0 Vdc,
R
L
=12Ω
Gate Trigger Voltage
Anode Voltage=7.0 Vdc,
R
L
=12Ω
V
DRM
= Rated,
R
L
=100Ω,
T
J
=125°C
2N1595
2N1596
2N1597
2N1598
2N1599
Max :1.0
Typ : 2.0
Max : 10
Typ : 0.7
Max : 3.0
Min : 0.2
Typ : 5.0
Typ : 1.1
Max : 2.0
Typ : 0.8
mA
mA
V
GT
V
mA
V
µs
µs
I
H
V
TM
t
gt
Holding Current
Anode Voltage=7.0 Vdc, gate open
Forward On Voltage
I
T
=1 Adc
Turn-On Time (t
d
+t
r
)
I
GT
=10 mA,
I
T
=1 A
Turn-Off Time
I
T
=1 A,
I
R
=1 A, dv/dt=20 V/
µs,
T
J
=125°C
V
DRM
= Rated Voltage
t
q
Typ : 10
* V
DRM
or
V
RSM
can be applied for all types on a continuous dc basis without incurring damage.
MECHANICAL DATA CASE TO-39
DIMENSIONS
A
B
C
D
E
F
G
H
L
Pin 1 :
Pin 2 :
Pin 3 :
mm inches
6,25
0,24
13,59
0,53
9,24
0,36
8,24
0,32
0,78
0,03
1,05 0,041
0,42 0,165
45°
5,1
0,2
Cathode
Gate
Anode
Information furnished is believed to be accurate and reliable. However, CS assumes no responsability
for the consequences of use of such information nor for errors that could appear.
Data are subject to change without notice.
COMSET SEMICONDUCTORS
2/2
Robotics Development
京公网安备 11010802033920号
EEWORLD
