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BT169GW

Description
Silicon Controlled Rectifier, 1 A, 600 V, SCR, PLASTIC, SOT-223, 4 PIN
CategoryAnalog mixed-signal IC    Trigger device   
File Size42KB,6 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
Download Datasheet Parametric Compare View All

BT169GW Overview

Silicon Controlled Rectifier, 1 A, 600 V, SCR, PLASTIC, SOT-223, 4 PIN

BT169GW Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeSOT-223
package instructionSMALL OUTLINE, R-PDSO-G4
Contacts4
Reach Compliance Codecompliant
Other featuresSENSITIVE GATE
Shell connectionANODE
Nominal circuit commutation break time100 µs
ConfigurationSINGLE
Maximum DC gate trigger current0.2 mA
Maximum DC gate trigger voltage0.8 V
Maximum holding current5 mA
JESD-30 codeR-PDSO-G4
JESD-609 codee3
Maximum leakage current0.1 mA
On-state non-repetitive peak current8 A
Number of components1
Number of terminals4
Maximum on-state current500 A
Maximum operating temperature125 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum rms on-state current1 A
Maximum repetitive peak off-state leakage current100 µA
Off-state repetitive peak voltage600 V
Repeated peak reverse voltage600 V
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Trigger device typeSCR
Base Number Matches1
Philips Semiconductors
Product specification
Thyristor
logic level
GENERAL DESCRIPTION
Passivated, sensitive gate thyristor in
a plastic envelope, suitable for
surface mounting, intended for use in
general purpose switching and phase
control applications. This device is
intended to be interfaced directly to
microcontrollers, logic integrated
circuits and other low power gate
trigger circuits.
BT169W Series
QUICK REFERENCE DATA
SYMBOL
V
DRM
,
V
RRM
I
T(AV)
I
T(RMS)
I
TSM
PARAMETER
BT169
Repetitive peak
off-state voltages
Average on-state
current
RMS on-state current
Non-repetitive peak
on-state current
MAX. MAX. MAX. MAX. UNIT
BW
200
0.5
0.8
8
DW
400
0.5
0.8
8
EW
500
0.5
0.8
8
GW
600
0.5
0.8
8
V
A
A
A
PINNING - SOT223
PIN
1
2
3
tab
DESCRIPTION
cathode
anode
gate
anode
PIN CONFIGURATION
4
SYMBOL
a
k
1
2
3
g
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
-
half sine wave;
T
sp
112 ˚C
all conduction angles
half sine wave;
T
j
= 25 ˚C prior to surge
t = 10 ms
t = 8.3 ms
t = 10 ms
I
TM
= 2 A; I
G
= 10 mA;
dI
G
/dt = 100 mA/µs
-
-
-
-
-
-
-
-
-
-
-
-40
-
B
200
1
MAX.
D
400
1
E
500
1
G
600
1
UNIT
V
A
A
A
A
A
2
s
A/µs
A
V
V
W
W
˚C
˚C
V
DRM
, V
RRM
Repetitive peak off-state
voltages
I
T(AV)
I
T(RMS)
I
TSM
Average on-state current
RMS on-state current
Non-repetitive peak
on-state current
0.63
1
8
9
0.32
50
1
5
5
2
0.1
150
125
I
2
t
dI
T
/dt
I
GM
V
GM
V
RGM
P
GM
P
G(AV)
T
stg
T
j
I
2
t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak reverse gate voltage
Peak gate power
Average gate power
over any 20 ms period
Storage temperature
Operating junction
temperature
1
Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
September 2001
1
Rev 1.400

BT169GW Related Products

BT169GW BT169EW
Description Silicon Controlled Rectifier, 1 A, 600 V, SCR, PLASTIC, SOT-223, 4 PIN Silicon Controlled Rectifier, 1 A, 500 V, SCR, PLASTIC, SOT-223, 4 PIN
Is it Rohs certified? conform to conform to
Parts packaging code SOT-223 SOT-223
package instruction SMALL OUTLINE, R-PDSO-G4 SMALL OUTLINE, R-PDSO-G4
Contacts 4 4
Reach Compliance Code compliant compliant
Other features SENSITIVE GATE SENSITIVE GATE
Shell connection ANODE ANODE
Nominal circuit commutation break time 100 µs 100 µs
Configuration SINGLE SINGLE
Maximum DC gate trigger current 0.2 mA 0.2 mA
Maximum DC gate trigger voltage 0.8 V 0.8 V
Maximum holding current 5 mA 5 mA
JESD-30 code R-PDSO-G4 R-PDSO-G4
JESD-609 code e3 e3
Maximum leakage current 0.1 mA 0.1 mA
On-state non-repetitive peak current 8 A 8 A
Number of components 1 1
Number of terminals 4 4
Maximum on-state current 500 A 500 A
Maximum operating temperature 125 °C 125 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Certification status Not Qualified Not Qualified
Maximum rms on-state current 1 A 1 A
Maximum repetitive peak off-state leakage current 100 µA 100 µA
Off-state repetitive peak voltage 600 V 500 V
Repeated peak reverse voltage 600 V 500 V
surface mount YES YES
Terminal surface Tin (Sn) Tin (Sn)
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
Trigger device type SCR SCR
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