2N2222A datasheet, PDF - EEWORLD Datasheet

2N2222A: Description500 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-18; CategoryDiscrete semiconductor The transistor; File Size303KB，4 Pages; ManufacturerMicro Electronics; Websitehttp://www.microelectr.com.hk

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500 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-18

Parameter Name	Attribute value
Maker	Micro Electronics
Parts packaging code	BCY
package instruction	CYLINDRICAL, O-MBCY-W3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	0.8 A
Collector-emitter maximum voltage	40 V
Configuration	SINGLE
Minimum DC current gain (hFE)	100
JEDEC-95 code	TO-18
JESD-30 code	O-MBCY-W3
Number of components	1
Number of terminals	3
Maximum operating temperature	200 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.5 W
Certification status	Not Qualified
surface mount	NO
Terminal form	WIRE
Terminal location	BOTTOM
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	250 MHz

	2N2222A	PN2222A	PN2222
Description	500 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-18	1000 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92	600 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
Maker	Micro Electronics	Micro Electronics	Micro Electronics
package instruction	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-PBCY-W3	CYLINDRICAL, O-PBCY-W3
Reach Compliance Code	unknown	unknown	unknow
ECCN code	EAR99	EAR99	EAR99
Maximum collector current (IC)	0.8 A	0.8 A	0.8 A
Collector-emitter maximum voltage	40 V	40 V	30 V
Configuration	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	100	100	100
JEDEC-95 code	TO-18	TO-92	TO-92
JESD-30 code	O-MBCY-W3	O-PBCY-W3	O-PBCY-W3
Number of components	1	1	1
Number of terminals	3	3	3
Maximum operating temperature	200 °C	150 °C	150 °C
Package body material	METAL	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	NPN	NPN	NPN
Maximum power dissipation(Abs)	0.5 W	0.625 W	0.625 W
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO
Terminal form	WIRE	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM	BOTTOM
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	250 MHz	300 MHz	250 MHz

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