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NAND02GW4B2BZA1F

Description
256M X 8 FLASH 3V PROM, 25000 ns, PDSO48
Categorystorage   
File Size506KB,62 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Download Datasheet Parametric View All

NAND02GW4B2BZA1F Overview

256M X 8 FLASH 3V PROM, 25000 ns, PDSO48

NAND02GW4B2BZA1F Parametric

Parameter NameAttribute value
Number of functions1
Number of terminals48
Maximum operating temperature85 Cel
Minimum operating temperature-40 Cel
Maximum supply/operating voltage3.6 V
Minimum supply/operating voltage2.7 V
Rated supply voltage3 V
maximum access time25000 ns
Processing package description12 X 20 MM, LEAD FREE, PLASTIC, TSOP-48
Lead-freeYes
EU RoHS regulationsYes
stateTRANSFERRED
packaging shapeRECTANGULAR
Package SizeSMALL OUTLINE, THIN PROFILE
surface mountYes
Terminal formGULL WING
Terminal spacing0.5000 mm
terminal coatingTIN/TIN BISMUTH
Terminal locationDUAL
Packaging MaterialsPLASTIC/EPOXY
Temperature levelINDUSTRIAL
memory width8
organize256M X 8
storage density2.15E9 deg
operating modeASYNCHRONOUS
Number of digits2.68E8 words
Number of digits256M
Memory IC typeFLASH 3V PROM
serial parallelPARALLEL
NAND01G-B2B
NAND02G-B2C
1 Gbit, 2 Gbit,
2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
Features
High Density NAND Flash memories
Up to 2 Gbit memory array
Cost effective solutions for mass
storage applications
x8 or x16 bus width
Multiplexed Address/ Data
Pinout compatibility for all densities
FBGA
NAND interface
TSOP48 12 x 20mm
Supply voltage: 1.8V/3.0V
Page size
x8 device: (2048 + 64 spare) Bytes
x16 device: (1024 + 32 spare) Words
VFBGA63 9.5 x 12 x 1mm
VFBGA63 9 x 11 x 1mm
Block size
x8 device: (128K + 4K spare) Bytes
x16 device: (64K + 2K spare) Words
Random access: 25µs (max)
Sequential access: 30ns (min)
Page program time: 200µs (typ)
Serial Number option
Data protection
Hardware Block Locking
Hardware Program/Erase locked during
Power transitions
100,000 Program/Erase cycles
10 years Data Retention
Page Read/Program
Data integrity
Copy Back Program mode
Cache Program and Cache Read modes
Fast Block Erase: 2ms (typ)
Status Register
Electronic Signature
Chip Enable ‘don’t care’
Product List
Reference
NAND01G-B2B
ECOPACK
®
packages
Development tools
Error Correction Code models
Bad Blocks Management and Wear
Leveling algorithms
Hardware simulation models
Table 1.
Part Number
NAND01GR3B2B, NAND01GW3B2B
NAND01GR4B2B
,
NAND01GW4B2B
(1)
NAND02GR3B2C, NAND02GW3B2C
NAND02G-B2C
1. x16 organization only available for MCP Products.
NAND02GR4B2C, NAND02GW4B2C
(1)
November 2006
Rev 3
1/62
www.st.com
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