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NAND02GR4B2BN1E

Description
256M X 8 FLASH 3V PROM, 25000 ns, PDSO48
Categorystorage    storage   
File Size506KB,62 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Environmental Compliance
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NAND02GR4B2BN1E Overview

256M X 8 FLASH 3V PROM, 25000 ns, PDSO48

NAND02GR4B2BN1E Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSTMicroelectronics
Parts packaging codeTSOP
package instructionTSOP1,
Contacts48
Reach Compliance Codecompli
ECCN code3A991.B.1.A
Maximum access time25000 ns
JESD-30 codeR-PDSO-G48
JESD-609 codee3
length18.4 mm
memory density2147483648 bi
Memory IC TypeFLASH
memory width16
Number of functions1
Number of terminals48
word count134217728 words
character code128000000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize128MX16
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP1
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
Programming voltage1.8 V
Certification statusNot Qualified
Maximum seat height1.2 mm
Maximum supply voltage (Vsup)1.95 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal pitch0.5 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width12 mm
NAND01G-B2B
NAND02G-B2C
1 Gbit, 2 Gbit,
2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
Features
High Density NAND Flash memories
Up to 2 Gbit memory array
Cost effective solutions for mass
storage applications
x8 or x16 bus width
Multiplexed Address/ Data
Pinout compatibility for all densities
FBGA
NAND interface
TSOP48 12 x 20mm
Supply voltage: 1.8V/3.0V
Page size
x8 device: (2048 + 64 spare) Bytes
x16 device: (1024 + 32 spare) Words
VFBGA63 9.5 x 12 x 1mm
VFBGA63 9 x 11 x 1mm
Block size
x8 device: (128K + 4K spare) Bytes
x16 device: (64K + 2K spare) Words
Random access: 25µs (max)
Sequential access: 30ns (min)
Page program time: 200µs (typ)
Serial Number option
Data protection
Hardware Block Locking
Hardware Program/Erase locked during
Power transitions
100,000 Program/Erase cycles
10 years Data Retention
Page Read/Program
Data integrity
Copy Back Program mode
Cache Program and Cache Read modes
Fast Block Erase: 2ms (typ)
Status Register
Electronic Signature
Chip Enable ‘don’t care’
Product List
Reference
NAND01G-B2B
ECOPACK
®
packages
Development tools
Error Correction Code models
Bad Blocks Management and Wear
Leveling algorithms
Hardware simulation models
Table 1.
Part Number
NAND01GR3B2B, NAND01GW3B2B
NAND01GR4B2B
,
NAND01GW4B2B
(1)
NAND02GR3B2C, NAND02GW3B2C
NAND02G-B2C
1. x16 organization only available for MCP Products.
NAND02GR4B2C, NAND02GW4B2C
(1)
November 2006
Rev 3
1/62
www.st.com
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