2N2838 datasheet, PDF - EEWORLD Datasheet

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2N2838: Description800 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-206AA; CategoryDiscrete semiconductor The transistor; File Size608KB，3 Pages; ManufacturerCentral Semiconductor

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2N2838 Overview

800 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-206AA

2N2838 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
package instruction	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	_compli
Maximum collector current (IC)	0.8 A
Collector-emitter maximum voltage	35 V
Configuration	SINGLE
Minimum DC current gain (hFE)	75
JEDEC-95 code	TO-18
JESD-30 code	O-MBCY-W3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	175 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	PNP
Maximum power dissipation(Abs)	0.5 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	120 MHz
Base Number Matches	1

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2N2221A

2N2222A

SILICON

NPN TRANSISTORS

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR 2N2221A and

2N2222A are silicon NPN epitaxial planar transistors

designed for small signal, general purpose switching

applications.

MARKING: FULL PART NUMBER

TO-18 CASE

MAXIMUM RATINGS:

(TA=25°C)

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Power Dissipation

Power Dissipation (TC=25°C)

Operating and Storage Junction Temperature

Thermal Resistance

ELECTRICAL

SYMBOL

ICBO

ICEV

IEBO

BVCBO

BVCEO

BVEBO

VCE(SAT)

VBE(SAT)

hFE

SYMBOL

VCBO

VCEO

VEBO

IC

PD

TJ, Tstg

Θ

JA

Θ

JC

UNITS

V

mA

mW

W

°C

°C/W

75

40

6.0

800

500

1.8

-65 to +200

350

97

CHARACTERISTICS:

(TA=25°C unless otherwise noted)

TEST CONDITIONS

MIN

VCB=60V

VCB=60V, TA=150°C

VCE=60V, VEB=3.0V

VEB=3.0V

IC=10μA

IC=10mA

IE=10μA

IC=150mA, IB=15mA

IC=500mA, IB=50mA

IC=150mA, IB=15mA

IC=500mA, IB=50mA

VCE=10V,

IC=0.1mA

IC=1.0mA

IC=10mA

MAX

10

UNITS

nA

μA

nA

V

2N2222A

MIN

MAX

35

-

50

-

75

-

35

100

50

40

-

300

-

75

40

6.0

0.3

0.6

2N2221A

MIN

MAX

20

-

25

-

35

-

15

40

20

25

-

120

-

1.0

1.2

2.0

VCE=10V, IC=10mA, TA=-55°C

VCE=10V, IC=150mA

VCE=1.0V, IC=150mA

VCE=10V, IC=500mA

R5 (5-December 2013)

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