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NAND01GR4B2BN1F

Description
256M X 8 FLASH 3V PROM, 25000 ns, PDSO48
Categorystorage    storage   
File Size506KB,62 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Environmental Compliance
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NAND01GR4B2BN1F Overview

256M X 8 FLASH 3V PROM, 25000 ns, PDSO48

NAND01GR4B2BN1F Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerSTMicroelectronics
Parts packaging codeTSOP
package instructionTSOP1,
Contacts48
Reach Compliance Codeunknow
ECCN code3A991.B.1.A
Maximum access time25000 ns
JESD-30 codeR-PDSO-G48
JESD-609 codee3/e6
length18.4 mm
memory density1073741824 bi
Memory IC TypeFLASH
memory width16
Number of functions1
Number of terminals48
word count67108864 words
character code64000000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize64MX16
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP1
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
Programming voltage1.8 V
Certification statusNot Qualified
Maximum seat height1.2 mm
Maximum supply voltage (Vsup)1.95 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTIN/TIN BISMUTH
Terminal formGULL WING
Terminal pitch0.5 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width12 mm
NAND01G-B2B
NAND02G-B2C
1 Gbit, 2 Gbit,
2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
Features
High Density NAND Flash memories
Up to 2 Gbit memory array
Cost effective solutions for mass
storage applications
x8 or x16 bus width
Multiplexed Address/ Data
Pinout compatibility for all densities
FBGA
NAND interface
TSOP48 12 x 20mm
Supply voltage: 1.8V/3.0V
Page size
x8 device: (2048 + 64 spare) Bytes
x16 device: (1024 + 32 spare) Words
VFBGA63 9.5 x 12 x 1mm
VFBGA63 9 x 11 x 1mm
Block size
x8 device: (128K + 4K spare) Bytes
x16 device: (64K + 2K spare) Words
Random access: 25µs (max)
Sequential access: 30ns (min)
Page program time: 200µs (typ)
Serial Number option
Data protection
Hardware Block Locking
Hardware Program/Erase locked during
Power transitions
100,000 Program/Erase cycles
10 years Data Retention
Page Read/Program
Data integrity
Copy Back Program mode
Cache Program and Cache Read modes
Fast Block Erase: 2ms (typ)
Status Register
Electronic Signature
Chip Enable ‘don’t care’
Product List
Reference
NAND01G-B2B
ECOPACK
®
packages
Development tools
Error Correction Code models
Bad Blocks Management and Wear
Leveling algorithms
Hardware simulation models
Table 1.
Part Number
NAND01GR3B2B, NAND01GW3B2B
NAND01GR4B2B
,
NAND01GW4B2B
(1)
NAND02GR3B2C, NAND02GW3B2C
NAND02G-B2C
1. x16 organization only available for MCP Products.
NAND02GR4B2C, NAND02GW4B2C
(1)
November 2006
Rev 3
1/62
www.st.com
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