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2N3740A

Description
Medium Power PNP Transistors
CategoryDiscrete semiconductor    The transistor   
File Size61KB,3 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
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2N3740A Overview

Medium Power PNP Transistors

2N3740A Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Reach Compliance Code_compli
ECCN codeEAR99
Other featuresHIGH RELIABILITY
Maximum collector current (IC)4 A
Collector-emitter maximum voltage60 V
ConfigurationSINGLE
Minimum DC current gain (hFE)10
JEDEC-95 codeTO-66
JESD-30 codeO-MBFM-P2
JESD-609 codee0
Number of components1
Number of terminals2
Maximum operating temperature200 °C
Package body materialMETAL
Package shapeROUND
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Maximum power dissipation(Abs)25 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formPIN/PEG
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)3 MHz
Base Number Matches1
7516 Central Industrial Drive
Riviera Beach, Florida
33404
PHONE: (561) 842-0305
FAX: (561) 845-7813
APPLICATIONS:
2N3740A
Drivers
Switches
Medium-Power Amplifiers
FEATURES:
Low Saturation Voltage: 0.6 V
CE(sat)
@ I
C
= 1.0 Amp
High Gain Characteristics: hFE @ I
C
= 250 mA: 30-100
Excellent Safe Area Limits
Low Collector Cutoff Current: 100 nA (Max) 2N3740A
Medium Power
PNP Transistors
DESCRIPTION:
These power transistors are produced by PPC's DOUBLE
DIFFUSED PLANAR process. This technology produces high
voltage devices with excellent switching speeds, frequency
response, gain linearity, saturation voltages, high current gain,
and safe operating areas. They are intended for use in
Commercial, Industrial, and Military power switching, amplifier,
and regulator applications.
Ultrasonically bonded leads and controlled die mount
techniques are utilized to further increase the SOA capability
and inherent reliability of these devices. The temperature
range to 200
°
C permits reliable operation in high ambients, and
the hermetically sealed package insures maximum reliability
and long life.
TO-66
ABSOLUTE MAXIMUM RATINGS:
SYMBOL
V
CEO
*
V
EB
*
V
CB
*
I
C
*
I
C
*
I
B
*
T
STG
*
T
J
*
P
D
*
θ
*
CHARACTERISTIC
Collector-Emitter Voltage
Emitter-Base Voltage
Collector-Base Voltage
Peak Collector Current
Continuous Collector Current
Base Current
Storage Temperature
Operating Junction Temperature
Total Device Dissipation
T
C
= 25
°
C
Derate above 25
°
C
Thermal Impedance
VALUE
60
7.0
60
10
4.0
2.0
-65 to 200
-65 to 200
25
0.143
7
UNITS
Vdc
Vdc
Vdc
Adc
Adc
Adc
°
C
°
C
Watts
W/
°
C
°
C/W
JC
Indicates JEDEC registered data.
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