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2N3868

Description
3000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-5
CategoryDiscrete semiconductor    The transistor   
File Size810KB,4 Pages
ManufacturerCentral Semiconductor
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2N3868 Overview

3000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-5

2N3868 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerCentral Semiconductor
Parts packaging codeTO-39
package instructionTO-39, 3 PIN
Contacts3
Reach Compliance Codeunknown
Maximum collector current (IC)3 A
ConfigurationSINGLE
Minimum DC current gain (hFE)30
JEDEC-95 codeTO-39
JESD-30 codeO-MBCY-W3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature200 °C
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Maximum power dissipation(Abs)1 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)60 MHz
Maximum off time (toff)400 ns
Maximum opening time (tons)100 ns
Base Number Matches1
2N3467
2N3468
SILICON
PNP TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N3467 and
2N3468 are silicon PNP switching transistors designed
for core driver applications.
MARKING: FULL PART NUMBER
TO-39 CASE
MAXIMUM RATINGS:
(TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Power Dissipation (TC=25°C)
Operating and Storage Junction Temperature
Thermal Resistance
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
PD
TJ, Tstg
Θ
JA
Θ
JC
2N3467
40
40
5.0
1.0
1.0
5.0
-65 to +200
175
35
2N3468
50
50
UNITS
V
V
V
A
W
W
°C
°C/W
°C/W
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless otherwise noted)
2N3467
SYMBOL
TEST CONDITIONS
MIN
MAX
ICBO
VCB=30V
-
100
ICBO
VCB=30V, TA=100°C
-
15
ICEV
IBEV
BVCBO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
VBE(SAT)
hFE
hFE
hFE
VCE=30V, VBE=3.0V
VCE=30V, VBE=3.0V
IC=10μA
IC=10mA
IE=10μA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=1.0A, IB=100mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=1.0A, IB=100mA
VCE=1.0V,
VCE=1.0V,
IC=150mA
IC=500mA
-
-
40
40
5.0
-
-
-
-
0.8
-
40
40
40
100
120
-
-
-
0.3
0.5
1.0
1.0
1.2
1.6
-
120
-
2N3468
MIN
MAX
-
100
-
-
-
50
50
5.0
-
-
-
-
0.8
-
25
25
20
15
100
120
-
-
-
0.36
0.6
1.2
1.0
1.2
1.6
-
75
-
UNITS
nA
μA
nA
nA
V
V
V
V
V
V
V
V
V
VCE=5.0V, IC=1.0A
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