2N3905 datasheet, PDF - EEWORLD Datasheet

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2N3905: DescriptionPNP SILICON PLANAR EPITAXIAL TRANSISTORS; CategoryDiscrete semiconductor The transistor; File Size37KB，2 Pages; ManufacturerDIOTEC; Websitehttp://www.diotec.com/; Environmental Compliance

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2N3905 Overview

PNP SILICON PLANAR EPITAXIAL TRANSISTORS

2N3905 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	DIOTEC
package instruction	,
Reach Compliance Code	compliant
Maximum collector current (IC)	0.2 A
Configuration	Single
Minimum DC current gain (hFE)	50
Humidity sensitivity level	1
Maximum operating temperature	150 °C
Polarity/channel type	PNP
Maximum power dissipation(Abs)	0.35 W
surface mount	NO
Nominal transition frequency (fT)	200 MHz
Base Number Matches	1

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2N3905, 2N3906

PNP

Version 2004-01-20

Switching Transistors

Si-Epitaxial PlanarTransistors

PNP

Power dissipation – Verlustleistung

Plastic case

Kunststoffgehäuse

Weight approx. – Gewicht ca.

Plastic material has UL classification 94V-0

Gehäusematerial UL94V-0 klassifiziert

Standard Pinning

1=C 2=B 3=E

625 mW

TO-92

(10D3)

0.18 g

Standard packaging taped in ammo pack

Standard Lieferform gegurtet in Ammo-Pack

Maximum ratings (T

= 25

Collector-Emitter-voltage

Collector-Base-voltage

Emitter-Base-voltage

Power dissipation – Verlustleistung

Collector current – Kollektorstrom (dc)

Peak collector current – Kollektorspitzenstrom

Junction temp. – Sperrschichttemperatur

Storage temperature – Lagerungstemperatur

B open

E open

C open

- V

CE0

- V

CE0

- V

EB0

tot

- I

Grenzwerte (T

= 25

2N3905, 2N3906

40 V

625 mW

)

100 mA

200 mA

150

- 55…+ 150

Characteristics (T

= 25

Min.

Collector saturation volt. – Kollektor-Sättigungsspannung

- I

= 10 mA, - I

= 1 mA

- I

= 50 mA, - I

= 5 mA

- I

= 10 mA, - I

= 1 mA

- I

= 50 mA, - I

= 5 mA

Collector cutoff current – Kollektorreststrom

- V

= 30 V, - V

= 3 V

Emitter cutoff current – Emitterreststrom

- V

= 30 V, - V

= 3 V

- I

EBV

–

- I

CEV

–

- V

CEsat

- V

CEsat

- V

BEsat

- V

BEsat

–

Kennwerte (T

= 25

Typ.

–

Max.

250 mV

400 mV

850 mV

950 mV

50 nA

Base saturation voltage – Basis-Sättigungsspannung

) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case

Gültig, wenn die Anschlußdrähte in 2 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden

2N3905 Related Products

	2N3905	2N3906
Description	PNP SILICON PLANAR EPITAXIAL TRANSISTORS	200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
Is it Rohs certified?	conform to	conform to
Reach Compliance Code	compliant	compli
Maximum collector current (IC)	0.2 A	0.2 A
Configuration	Single	SINGLE
Minimum DC current gain (hFE)	50	30
Humidity sensitivity level	1	1
Maximum operating temperature	150 °C	150 °C
Polarity/channel type	PNP	PNP
surface mount	NO	NO
Nominal transition frequency (fT)	200 MHz	250 MHz
Base Number Matches	1	1

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