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BC-308

Description
SILICON PLANAR EPITAXIAL TRANSISTORS
File Size107KB,5 Pages
ManufacturerCDIL
Websitehttp://www.cdilsemi.com
Download Datasheet View All

BC-308 Overview

SILICON PLANAR EPITAXIAL TRANSISTORS

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SILICON PLANAR EPITAXIAL TRANSISTORS
BC 307, A, B, C
BC 308, A, B, C
BC 309, A, B, C
TO-92
Plastic Package
General Purpose Transistors Deisgned For Small Signal Amplification
From DC To Low Radio Frequencies
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
BC307 BC308 BC309
V
CEO
Collector Emitter Voltage
45
25
25
V
CBO
50
30
30
Collector Base Voltage
V
EBO
Emitter Base Voltage
5
5
5
I
C
Collector Current Continuous
100
P
D
Power Dissipation@ Ta=25ºC
350
Derate Above 25ºC
2.8
P
D
Power Dissipation@ Tc=25ºC
1
Derate Above 25ºC
8
T
j
, T
stg
Operating And Storage Junction
-55 to +150
Temperature Range
THERMAL RESISTANCE
Junction to ambient
Junction to case
UNITS
V
V
V
mA
mW
mW/°C
W
mW/°C
°C
R
th(j-a)
R
th(j-c)
357
125
°C/W
°C/W
Continental Device India Limited
Data Sheet
Page 1 of 5
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