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2N5195

Description
4 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-126
CategoryDiscrete semiconductor    The transistor   
File Size279KB,4 Pages
ManufacturerCentral Semiconductor
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2N5195 Overview

4 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-126

2N5195 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Code_compli
ECCN codeEAR99
Maximum collector current (IC)4 A
Collector-emitter maximum voltage80 V
ConfigurationSINGLE
Minimum DC current gain (hFE)7
JEDEC-95 codeTO-126
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Maximum power dissipation(Abs)40 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)2 MHz
Base Number Matches1
2N5193
2N5194
2N5195
PNP SILICON
POWER TRANSISTORS
Central
TM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N5193 Series
types are Silicon PNP Power Transistors, manufactured
by the epitaxial base process, designed for medium
power amplifier and switching applications.
These devices are complementary to the NPN 2N5190
Series types.
MARKING: FULL PART NUMBER
TO-126 CASE
MAXIMUM RATINGS:
(TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Base Current
Power Dissipation (TC=25°C)
Operating and Storage Junction Temperature
Thermal Resistance (Junction to Case)
ELECTRICAL CHARACTERISTICS:
(TC=25°C)
SYMBOL
TEST CONDITIONS
ICBO
VCB=Rated VCBO
ICEX
ICEO
IEBO
BVCEO
BVCEO
BVCEO
VCE(SAT)
VCE(SAT)
VBE(ON)
hFE
hFE
hFE
hFE
fT
VCE=Rated VCEO, VEB=1.5V
VCE=Rated VCEO
VEB=5.0V
IC=100mA (2N5193)
IC=100mA (2N5194)
IC=100mA (2N5195)
IC=1.5A, IB=150mA
IC=4.0A, IB=1.0A
VCE=2.0V, IC=1.5A
VCE=2.0V, IC=1.5A (2N5193, 2N5194)
VCE=2.0V, IC=1.5A (2N5195)
VCE=2.0V, IC=4.0A (2N5193, 2N5194)
VCE=2.0V, IC=4.0A (2N5195)
VCE=10V, IC=1.0A, f=1.0MHz
25
20
10
7.0
2.0
MHz
40
60
80
0.6
1.4
1.2
100
80
SYMBOL
VCBO
VCEO
VEBO
IC
IB
PD
TJ, Tstg
Θ
JC
2N5193
40
40
2N5194
60
60
5.0
4.0
1.0
40
-65 to +150
3.12
2N5195
80
80
UNITS
V
V
V
A
A
W
°C
°C/W
MIN
MAX
100
100
1.0
1.0
UNITS
μA
μA
mA
mA
V
V
V
V
V
V
R1 (10-February 2009)

2N5195 Related Products

2N5195 2N5193 2N5194
Description 4 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-126 4 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-126 4 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-126
Is it lead-free? Contains lead Contains lead Contains lead
Is it Rohs certified? incompatible incompatible incompatible
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code _compli _compli _compli
ECCN code EAR99 EAR99 EAR99
Maximum collector current (IC) 4 A 4 A 4 A
Collector-emitter maximum voltage 80 V 40 V 60 V
Configuration SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 7 10 10
JEDEC-95 code TO-126 TO-126 TO-126
JESD-30 code R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
JESD-609 code e0 e0 e0
Number of components 1 1 1
Number of terminals 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C
Minimum operating temperature -65 °C -65 °C -65 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type PNP PNP PNP
Maximum power dissipation(Abs) 40 W 40 W 40 W
Certification status Not Qualified Not Qualified Not Qualified
surface mount NO NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 2 MHz 2 MHz 2 MHz
Base Number Matches 1 1 1
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