MX29LV320ABXBC-90G datasheet, PDF

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MX29LV320ABXBC-90G: Description32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY; Categorystorage storage; File Size616KB，60 Pages; ManufacturerMacronix; Websitehttp://www.macronix.com/en-us/Pages/default.aspx

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MX29LV320ABXBC-90G Overview

32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY

MX29LV320ABXBC-90G Parametric

Parameter Name	Attribute value
Maker	Macronix
Parts packaging code	BGA
package instruction	TFBGA, BGA48,6X8,32
Contacts	48
Reach Compliance Code	unknow
ECCN code	3A991.B.1.A
Maximum access time	90 ns
Spare memory width	8
startup block	BOTTOM
command user interface	YES
Universal Flash Interface	YES
Data polling	YES
JESD-30 code	R-PBGA-B48
JESD-609 code	e1
length	8 mm
memory density	33554432 bi
Memory IC Type	FLASH
memory width	16
Humidity sensitivity level	2A
Number of functions	1
Number of departments/size	8,63
Number of terminals	48
word count	2097152 words
character code	2000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	2MX16
Package body material	PLASTIC/EPOXY
encapsulated code	TFBGA
Encapsulate equivalent code	BGA48,6X8,32
Package shape	RECTANGULAR
Package form	GRID ARRAY, THIN PROFILE, FINE PITCH
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	260
power supply	3/3.3 V
Programming voltage	3 V
Certification status	Not Qualified
ready/busy	YES
Maximum seat height	1.2 mm
Department size	8K,64K
Maximum standby current	0.000015 A
Maximum slew rate	0.03 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	2.7 V
Nominal supply voltage (Vsup)	3 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	TIN SILVER COPPER
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	40
switch bit	YES
type	NOR TYPE
width	6 mm

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MX29LV320AT/B

32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE

3V ONLY FLASH MEMORY

FEATURES

GENERAL FEATURES

• 4,194,304 x 8 / 2,097,152 x 16 switchable

• Sector Structure

- 8K-Byte x 8 and 64K-Byte x 63

• Extra 64K-Byte sector for security

- Features factory locked and identifiable, and cus-

tomer lockable

• Twenty-Four Sector Groups

- Provides sector group protect function to prevent pro-

gram or erase operation in the protected sector group

- Provides chip unprotect function to allow code chang-

ing

- Provides temporary sector group unprotect function

for code changing in previously protected sector groups

• Single Power Supply Operation

- 2.7 to 3.6 volt for read, erase, and program opera-

tions

• Latch-up protected to 250mA from -1V to Vcc + 1V

• Low Vcc write inhibit is equal to or less than 1.4V

• Compatible with JEDEC standard

- Pinout and software compatible to single power sup-

ply Flash

•

2nd generation of 3V/32M Flash product

- Fully compatible with MX29LV320T/B device

PERFORMANCE

• High Performance

- Fast access time: 70/90ns

- Fast program time: 7us/word typical utilizing acceler-

ate function

- Fast erase time: 0.9s/sector, 35s/chip (typical)

• Low Power Consumption

- Low active read current: 10mA (typical) at 5MHz

- Low standby current: 200nA (typical)

• Minimum 100,000 erase/program cycle

• 10 years data retention

SOFTWARE FEATURES

• Erase Suspend/ Erase Resume

- Suspends sector erase operation to read data from

or program data to another sector which is not being

erased

• Status Reply

- Data polling & Toggle bits provide detection of pro-

gram and erase operation completion

• Support Common Flash Interface (CFI)

HARDWARE FEATURES

• Ready/Busy (RY/BY) Output

- Provides a hardware method of detecting program

and erase operation completion

• Hardware Reset (RESET) Input

- Provides a hardware method to reset the internal state

machine to read mode

• WP/ACC input pin

- Provides accelerated program capability

PACKAGE

• 48-Pin TSOP

• 48-Ball CSP

GENERAL DESCRIPTION

The MX29LV320AT/B is a 32-mega bit Flash memory

organized as 4M bytes of 8 bits and 2M words of 16 bits.

MXIC's Flash memories offer the most cost-effective and

reliable read/write non-volatile random access memory.

The MX29LV320AT/B is packaged in 48-pin TSOP and

48-ball CSP. It is designed to be reprogrammed and

erased in system or in standard EPROM programmers.

The standard MX29LV320AT/B offers access time as

fast as 70ns, allowing operation of high-speed micropro-

cessors without wait states. To eliminate bus conten-

tion, the MX29LV320AT/B has separate chip enable (CE)

and output enable (OE) controls.

P/N:PM1008

MXIC's Flash memories augment EPROM functionality

with in-circuit electrical erasure and programming. The

MX29LV320AT/B uses a command register to manage

this functionality.

MXIC Flash technology reliably stores memory

contents even after 100,000 erase and program

cycles. The MXIC cell is designed to optimize the

erase and program mechanisms. In addition, the

combination of advanced tunnel oxide processing

and low internal electric fields for erase and

programming operations produces reliable cycling.

REV. 1.1, MAY 28, 2004

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