MX29LV160CTXBI-55R datasheet, PDF

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MX29LV160CTXBI-55R: Description16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY; Categorystorage storage; File Size774KB，66 Pages; ManufacturerMacronix; Websitehttp://www.macronix.com/en-us/Pages/default.aspx

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MX29LV160CTXBI-55R Overview

16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY

MX29LV160CTXBI-55R Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Macronix
Parts packaging code	BGA
package instruction	TFBGA, BGA48,6X8,32
Contacts	48
Reach Compliance Code	unknow
ECCN code	EAR99
Maximum access time	55 ns
Spare memory width	8
startup block	TOP
command user interface	YES
Universal Flash Interface	YES
Data polling	YES
JESD-30 code	R-PBGA-B48
JESD-609 code	e0
length	8 mm
memory density	16777216 bi
Memory IC Type	FLASH
memory width	16
Number of functions	1
Number of departments/size	1,2,1,31
Number of terminals	48
word count	1048576 words
character code	1000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	1MX16
Package body material	PLASTIC/EPOXY
encapsulated code	TFBGA
Encapsulate equivalent code	BGA48,6X8,32
Package shape	RECTANGULAR
Package form	GRID ARRAY, THIN PROFILE, FINE PITCH
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	3/3.3 V
Programming voltage	3 V
Certification status	Not Qualified
ready/busy	YES
Maximum seat height	1.2 mm
Department size	16K,8K,32K,64K
Maximum standby current	0.000005 A
Maximum slew rate	0.03 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
switch bit	YES
type	NOR TYPE
width	6 mm

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MX29LV160C T/B

16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE

3V ONLY FLASH MEMORY

FEATURES

• Extended single - supply voltage range 2.7V to 3.6V

• 2,097,152 x 8/1,048,576 x 16 switchable

• Single power supply operation

- 3.0V only operation for read, erase and program

operation

•

Fully compatible with MX29LV160B device

• Fast access time: 55R/70/90ns

• Low power consumption

- 30mA maximum active current

- 0.2uA typical standby current

• Command register architecture

- Byte/word Programming (9us/11us typical)

- Sector Erase (Sector structure 16K-Bytex1,

8K-Bytex2, 32K-Bytex1, and 64K-Byte x31)

• Auto Erase (chip & sector) and Auto Program

- Automatically erase any combination of sectors with

Erase Suspend capability.

- Automatically program and verify data at specified

address

• Erase Suspend/Erase Resume

- Suspends sector erase operation to read data from,

or program data to, any sector that is not being erased,

then resumes the erase.

• Status Reply

- Data# Polling & Toggle bit for detection of program

and erase operation completion.

• Ready/Busy# pin (RY/BY#)

- Provides a hardware method of detecting program or

erase operation completion.

• Sector protection

- Hardware method to disable any combination of

sectors from program or erase operations

- Temporary sector unprotect allows code changes in

previously locked sectors.

• CFI (Common Flash Interface) compliant

- Flash device parameters stored on the device and

provide the host system to access

• 100,000 minimum erase/program cycles

• Latch-up protected to 100mA from -1V to VCC+1V

• Boot Sector Architecture

- T = Top Boot Sector

- B = Bottom Boot Sector

• Low VCC write inhibit is equal to or less than 1.4V

• Package type:

- 44-pin SOP

- 48-pin TSOP

- 48-ball CSP

All Pb-free devices are RoHS Compliant

• Compatibility with JEDEC standard

- Pinout and software compatible with single-power

supply Flash

• 10 years data retention

GENERAL DESCRIPTION

The MX29LV160C T/B is a 16-mega bit Flash memory

organized as 2M bytes of 8 bits or 1M words of 16 bits.

MXIC's Flash memories offer the most cost-effective

and reliable read/write non-volatile random access

memory. The MX29LV160C T/B is packaged in 44-pin

SOP, 48-pin TSOP and 48-ball CSP. It is designed to be

reprogrammed and erased in system or in standard

EPROM programmers.

The standard MX29LV160C T/B offers access time as

fast as 55ns, allowing operation of high-speed micropro-

cessors without wait states. To eliminate bus conten-

tion, the MX29LV160C T/B has separate chip enable

(CE#) and output enable (OE#) controls.

MXIC's Flash memories augment EPROM functionality

with in-circuit electrical erasure and programming. The

MX29LV160C T/B uses a command register to manage

this functionality. The command register allows for 100%

P/N:PM1186

TTL level control inputs and fixed power supply levels

during erase and programming, while maintaining maxi-

mum EPROM compatibility.

MXIC Flash technology reliably stores memory contents

even after 100,000 erase and program cycles. The MXIC

cell is designed to optimize the erase and programming

mechanisms. In addition, the combination of advanced

tunnel oxide processing and low internal electric fields

for erase and program operations produces reliable cy-

cling. The MX29LV160C T/B uses a 2.7V~3.6V VCC

supply to perform the High Reliability Erase and auto

Program/Erase algorithms.

The highest degree of latch-up protection is achieved

with MXIC's proprietary non-epi process. Latch-up pro-

tection is proved for stresses up to 100 milliamps on

address and data pin from -1V to VCC + 1V.

REV. 1.2, JAN. 19, 2006

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