LAB
MECHANICAL DATA
Dimensions in mm (inches)
8.89 (0.35)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
4.19 (0.165)
4.95 (0.195)
SEME
2N5338X
2N5339X
NPN SILICON
TRANSISTORS
12.70
(0.500)
min.
0.89 max.
(0.035)
7.75 (0.305)
8.51 (0.335)
dia.
DESCRIPTION
5.08 (0.200)
typ.
2
1
0.66 (0.026)
1.14 (0.045)
0.71 (0.028)
0.86 (0.034)
2.54
(0.100)
The 2N5339X silicon expitaxial planar
NPN transistor in jedec TO-39 metal
case intended for use as drivers for
high power transistors in general
purpose, amplifier and switching circuit
3
45˚
TO-39
Pin 1 – Emitter
Pin 2 – Base
Pin 3 – Collector
ABSOLUTE MAXIMUM RATINGS
T
CASE
= 25°c unless otherwise stated
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
tot
T
stg
T
j
Collector – Base Voltage(I
E
= 0)
Collector – Emitter Voltage (I
B
= 0)
Emitter – Base Voltage (I
C
= 0)
Collector Current
Collector Peak Current
Base Current
Total Dissipation at T
case
£
25°C
T
amb
£
25°C
Storage Temperature Range
Junction temperature
100V
100V
6V
5A
7A
1A
6W
1W
–65 to +200°C
200°C
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Prelim. 11/99
LAB
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
Max
29.2
175
SEME
2N5338X
2N5339X
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(Tcase = 25°C unless otherwise stated)
Parameter
I
CBO
I
CEX
I
CEO
Collector Cut Off Current
Collector Cut Off Current
Collector Cut Off Current
Test Conditions
I
E
= 0
V
BE
= 1.5V
I
B
= 0
I
B
= 0
I
C
= 2A
I
C
= 5A
I
C
= 2A
I
C
= 5A
I
C
= 0.5A
I
C
= 2A
I
C
= 5A
I
C
=0.5mA
I
E
= 0
f = 0.1MHz
I
C
= 2A
I
B1
= 0.2mA
I
C
= 2A
V
CC
= 40V
I
B1
= - I
B2
= 0.2A
V
CC
= 40V
V
CB
= 100V
V
CE
= 90V
Tcase = 150°C
V
CE
= 90V
I
C
= 50mA
I
B
= 0.2A
I
B
= 0.5A
I
B
= 0.2A
I
B
= 0.5A
V
CE
= 2V
V
CE
= 2V
V
CE
= 2V
V
CE
= 10V
V
CB
= 10V
Min.
Typ.
Max.
10
10
1
100
100
0.7
1.2
1.2
1.8
Unit
µA
µA
mA
µA
V
V
V
V
CEO(sus)*
Collector Emitter Sustaining Voltage
V
CE(sat)*
V
BE(sat)*
Collector Emitter Saturation Voltage
Base Emitter Voltage
60
60
40
30
250
200
2.5
200
MHz
pF
ns
240
—
h
FE*
f
T
C
CBO
t
on
t
s
t
f
DC Current Gain
Transistion Frequency
Collector Base Capacitance
Turn-on Time
Storage Time
Fall Time
m
s
ns
* Pulse test t
p
= 300
m
s , Duty Cycle 1.5%
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Prelim. 11/99
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